Presidential Young Investigators Award for MOCVD System

The first two years of funding from NSF for this award will be used to acquire a specially designed system to do metal organic chemical vapor deposition of ternaries and quaternaries from the Ga-Al-In-As-Ph system. While 1:1 matching monies and funding for safety related equipment such as gas cabinets and scrubbers have been secured from the University, it is expected that the cost of this system will fully absorb two years of both base and industry matched funding under the PYI program. The system will be used for three research areas: growth techniques, which will compare rapid thermal and gas switched control of the epitaxy, interrupted epitaxy which will explore techniques for insitu substrate cleaning to reinitiate growth on partially processed wafers, and studies of new optoelectronic devices. This last project will be done in collaboration with several colleagues.