Abstract
Using simple on-chip monitoring circuits, we precisely characterized the impact of hot carrier injection and bias temperature instability on frequency and phase noise degradation of a 65nm all-digital PLL circuit. Experimental data shows that PLL phase noise degrades with aging even though the output frequency is maintained constant due to the PLL feedback operation. Results show that applying high temperature annealing can recover most of the phase noise degradation.
Original language | English (US) |
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Title of host publication | 2018 IEEE International Reliability Physics Symposium, IRPS 2018 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 5C.21-5C.26 |
ISBN (Electronic) | 9781538654798 |
DOIs | |
State | Published - May 25 2018 |
Event | 2018 IEEE International Reliability Physics Symposium, IRPS 2018 - Burlingame, United States Duration: Mar 11 2018 → Mar 15 2018 |
Publication series
Name | IEEE International Reliability Physics Symposium Proceedings |
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Volume | 2018-March |
ISSN (Print) | 1541-7026 |
Other
Other | 2018 IEEE International Reliability Physics Symposium, IRPS 2018 |
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Country/Territory | United States |
City | Burlingame |
Period | 3/11/18 → 3/15/18 |
Bibliographical note
Publisher Copyright:© 2018 IEEE.
Keywords
- Bias temperature instability (BTI)
- hot carrier injection (HCI)
- phase noise
- phase-locked loop (PLL)
- thermal recovery