Abstract
Anodization of Ti by high electric fields at the tip of a scanned probe can be used to produce nanoscale features consisting of oxides of Ti. In this manner, Ti can be used as a sacrificial resist for nanoscale lithography by exploiting the etching selectivity differences between Ti and anodized Ti. The anodization was accomplished with an atomic force microscope using Ti-coated silicon nitride cantilevers. The anodizing bias voltage is applied to the tip and is independent of the feedback, unlike the scanning tunneling microscope. With this setup we were able to fabricate sub-40 nm lines by direct anodization of Ti. It is also shown that once tip and sample are brought into hard contact, subsequent bending of the cantilever has little effect on the linewidth or thickness of the anodized material.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 125-130 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 380 |
| DOIs | |
| State | Published - 1995 |
| Event | Proceedings of the 1995 MRS Spring Meeting - San Francisco, CA, USA Duration: Apr 17 1995 → Apr 21 1995 |
Bibliographical note
Funding Information:This work was supported in part by the Natural Science Foundation of China (Project No. 61420106011, 61601277, 61601279) , the Shanghai Science and Technology Development Funds (Project No. 17010500400,15530500600,16 511104100, 16YF1403900) , and China Postdoctoral Science Foundation funded project (2016M601564).