Characterization of (001) β-Ga₂O₃ Schottky diodes with drift layer grown by MOCVD

Growing a thick high-quality epitaxial layer on the β-Ga₂O₃ substrate is crucial in commercializing β-Ga₂O₃ devices. Metal organic chemical vapor deposition (MOCVD) is also well-established for the large-scale commercial growth of β-Ga₂O₃ and related heterostructures. This paper presents a systematic study of the Schottky barrier diodes fabricated on two different Si-doped homoepitaxial β-Ga₂O₃ thin films grown on Sn-doped (001) and (010) β-Ga₂O₃ substrates by MOCVD. X-ray diffraction analysis of the MOCVD-grown sample, room temperature current density-voltage data for different Schottky diodes, and C-V measurements are presented. Diode characteristics, such as ideality factor, barrier height, specific on-resistance, and breakdown voltage, are studied. Temperature dependence (170-360 K) of the ideality factor, barrier height, and Poole-Frenkel reverse leakage mechanism are also analyzed from the J-V-T characteristics of the fabricated Schottky diodes.