Abstract
Mixed phase thin films consisting of hydrogenated amorphous silicon (a-Si:H) in which germanium nanocrystals (nc-Ge) are embedded have been synthesized using a dual-chamber codeposition system. Raman spectroscopy and x-ray diffraction measurements confirm the presence of 4-4.5 nm diameter nc-Ge homogenously embedded within the a-Si:H matrix. The conductivity and thermopower are studied as the germanium crystal fraction XGe is systematically increased. For XGe < 10%, the thermopower is n-type (as in undoped a-Si:H) while for XGe > 25% p-type transport is observed. For films with 10 < XGe < 25% the thermopower shifts from p-type to n-type as the temperature is increased. This transition is faster than expected from a standard two-channel model for charge transport.
| Original language | English (US) |
|---|---|
| Title of host publication | Film Silicon Science and Technology |
| Pages | 195-200 |
| Number of pages | 6 |
| DOIs | |
| State | Published - 2013 |
| Event | 2013 MRS Spring Meeting - San Francisco, CA, United States Duration: Apr 1 2013 → Apr 5 2013 |
Publication series
| Name | Materials Research Society Symposium Proceedings |
|---|---|
| Volume | 1536 |
| ISSN (Print) | 0272-9172 |
Other
| Other | 2013 MRS Spring Meeting |
|---|---|
| Country/Territory | United States |
| City | San Francisco, CA |
| Period | 4/1/13 → 4/5/13 |
Bibliographical note
Copyright:Copyright 2013 Elsevier B.V., All rights reserved.
