Abstract
The effect of contact gating is studied in high-performance, dual-gated, single-layer (1L) WS2 MOSFETs with semi-metallic Bi contacts. Using a dual-gate geometry, we study the contribution of contact gating in lowering contact resistance, <italic>RC</italic>, by changing the top-gate and bottom-gate voltages independently. The <italic>RC</italic> of the bottom-gated biasing configuration shows ~20× lower contact resistance than the top-gated biasing configuration. <italic>RC</italic> is shown to be strongly affected by the bottom gate voltage, even at fixed channel carrier concentration, and this dependence is shown to be related to modulation of the transfer length by the bottom gate. The results show that despite the importance of semi-metallic materials in improving contact resistance, contact gating is still necessary to achieve ultra-low contact resistance.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1 |
| Number of pages | 1 |
| Journal | IEEE Electron Device Letters |
| DOIs | |
| State | Accepted/In press - 2022 |
Bibliographical note
Publisher Copyright:IEEE
Keywords
- chemical vapor deposition
- Conductivity
- Contact resistance
- Geometry
- Logic gates
- monolayer
- MOSFET
- MOSFET
- Performance evaluation
- Resistance
- transition-metal dichalcogenide
- WS<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">2</sub>