Contacts for 2D-Material MOSFETs: Recent Advances and Outstanding Challenges

Steven J. Koester

doi:10.1109/EDTM55494.2023.10103009

Contacts for 2D-Material MOSFETs: Recent Advances and Outstanding Challenges

Steven J. Koester

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

A review of advances in contact technology for 2D material MOSFETs is provided. Phase-engineered contacts to transition metal dichalcogenides (TMDCs) are reviewed, along with recent progress on semimetallic contacts to TMDCs. Finally, the outstanding manufacturing challenges are discussed.

Original language	English (US)
Title of host publication	7th IEEE Electron Devices Technology and Manufacturing Conference
Subtitle of host publication	Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798350332520
DOIs	https://doi.org/10.1109/EDTM55494.2023.10103009
State	Published - 2023
Event	7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023 - Seoul, Korea, Republic of Duration: Mar 7 2023 → Mar 10 2023

Publication series

Name	7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023

Conference

Conference	7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023
Country/Territory	Korea, Republic of
City	Seoul
Period	3/7/23 → 3/10/23

Bibliographical note

Funding Information:
The authors acknowledge support from Intel Corporation and DTRA through Award No. HDTRA1-14-1-0042. In addition, portions of this work were conducted in the Minnesota Nano Center, which is supported by the NSF through the NNCI under Award No. ECCS-2025124.

Publisher Copyright:
© 2023 IEEE.

Keywords

2D materials
contacts
TMDCs

Access

10.1109/EDTM55494.2023.10103009

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Cite this

Koester, S. J. (2023). Contacts for 2D-Material MOSFETs: Recent Advances and Outstanding Challenges. In 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023 (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM55494.2023.10103009

Contacts for 2D-Material MOSFETs: Recent Advances and Outstanding Challenges. / Koester, Steven J.
7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Koester, SJ 2023, Contacts for 2D-Material MOSFETs: Recent Advances and Outstanding Challenges. in 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023, Institute of Electrical and Electronics Engineers Inc., 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023, Seoul, Korea, Republic of, 3/7/23. https://doi.org/10.1109/EDTM55494.2023.10103009

Koester SJ. Contacts for 2D-Material MOSFETs: Recent Advances and Outstanding Challenges. In 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. Institute of Electrical and Electronics Engineers Inc. 2023. (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023). doi: 10.1109/EDTM55494.2023.10103009

Koester, Steven J. / Contacts for 2D-Material MOSFETs : Recent Advances and Outstanding Challenges. 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023).

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Contacts for 2D-Material MOSFETs: Recent Advances and Outstanding Challenges

Abstract

Publication series

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Bibliographical note

Keywords

Access

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