Current noise measurements of surface defect states in amorphous silicon

Chemical Compounds

• Amorphous Silicon 99%
• Surface Defect 87%
• Etching 49%
• Surface Damage 27%
• Band Bending 26%
• Space Charge 23%
• Surface 23%
• Surface State 21%
• Ion 21%
• Conductance 17%
• Liquid Film 8%
• Energy 8%

Engineering & Materials Science

• Amorphous silicon 100%
• Surface defects 88%
• Reactive ion etching 39%
• Fermi level 25%
• Surface states 20%
• Electric space charge 19%
• Power spectrum 15%
• Etching 15%
• Thin films 13%
• Ions 13%

Physics & Astronomy

• surface defects 80%
• noise measurement 78%
• amorphous silicon 67%
• etching 27%
• ions 17%
• noise spectra 13%
• power spectra 11%
• depletion 10%
• space charge 10%
• trapping 9%
• damage 8%
• causes 7%
• thin films 6%
• energy 3%