DC and RF characterization of sub-100-nm-gate-length strained Ge-on-insulator p-MOSFETs

S. W. Bedell, A. Majumdar, K. A. Jenkins, J. A. Ott, J. Arnold, K. Fogel, S. J. Koester, D. K. Sadana

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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