Device Model for Graphene Spin Valves

Feilong Liu; Yue Liu; Darryl L. Smith; P. Paul Ruden

doi:10.1109/TED.2015.2464793

Device Model for Graphene Spin Valves

Feilong Liu, Yue Liu, Darryl L. Smith, P. Paul Ruden

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

A 1-D drift-diffusion device model for graphene spin valves is presented. The model describes properly the electronic and the spintronic properties, such as electrostatics, charge and spin injection, transport, spin relaxation, spin-current profiles, and bias-dependent magnetoresistance. The model calculations agree qualitatively with relevant experimental results, and provide physical insight.

Original language	English (US)
Article number	7208882
Pages (from-to)	3426-3432
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	62
Issue number	10
DOIs	https://doi.org/10.1109/TED.2015.2464793
State	Published - Oct 1 2015

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

Keywords

Magnetoresistance (MR)
Semiconductor device modeling
Spin valves

Access

10.1109/TED.2015.2464793

OpenUrl availability

Full text

Cite this

@article{6cba35fab399424ea2525af5474817ca,

title = "Device Model for Graphene Spin Valves",

abstract = "A 1-D drift-diffusion device model for graphene spin valves is presented. The model describes properly the electronic and the spintronic properties, such as electrostatics, charge and spin injection, transport, spin relaxation, spin-current profiles, and bias-dependent magnetoresistance. The model calculations agree qualitatively with relevant experimental results, and provide physical insight.",

keywords = "Magnetoresistance (MR), Semiconductor device modeling, Spin valves",

author = "Feilong Liu and Yue Liu and Smith, {Darryl L.} and Ruden, {P. Paul}",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.",

year = "2015",

month = oct,

day = "1",

doi = "10.1109/TED.2015.2464793",

language = "English (US)",

volume = "62",

pages = "3426--3432",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

}

TY - JOUR

T1 - Device Model for Graphene Spin Valves

AU - Liu, Feilong

AU - Liu, Yue

AU - Smith, Darryl L.

AU - Ruden, P. Paul

PY - 2015/10/1

Y1 - 2015/10/1

N2 - A 1-D drift-diffusion device model for graphene spin valves is presented. The model describes properly the electronic and the spintronic properties, such as electrostatics, charge and spin injection, transport, spin relaxation, spin-current profiles, and bias-dependent magnetoresistance. The model calculations agree qualitatively with relevant experimental results, and provide physical insight.

AB - A 1-D drift-diffusion device model for graphene spin valves is presented. The model describes properly the electronic and the spintronic properties, such as electrostatics, charge and spin injection, transport, spin relaxation, spin-current profiles, and bias-dependent magnetoresistance. The model calculations agree qualitatively with relevant experimental results, and provide physical insight.

KW - Magnetoresistance (MR)

KW - Semiconductor device modeling

KW - Spin valves

UR - http://www.scopus.com/inward/record.url?scp=84958109433&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84958109433&partnerID=8YFLogxK

U2 - 10.1109/TED.2015.2464793

DO - 10.1109/TED.2015.2464793

M3 - Article

AN - SCOPUS:84958109433

SN - 0018-9383

VL - 62

SP - 3426

EP - 3432

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 10

M1 - 7208882

ER -

Device Model for Graphene Spin Valves

Abstract

Bibliographical note

Keywords

Access

OpenUrl availability

Other files and links

Fingerprint

Cite this