Abstract
Quantum devices based on InSb nanowires (NWs) are a prime candidate system for realizing and exploring topologically-protected quantum states and for electrically-controlled spin-based qubits. The influence of disorder on achieving reliable quantum transport regimes has been studied theoretically, highlighting the importance of optimizing both growth and nanofabrication. In this work, we consider both aspects. We developed InSb NW with thin diameters, as well as a novel gating approach, involving few-layer graphene and atomic layer deposition-grown AlO x . Low-temperature electronic transport measurements of these devices reveal conductance plateaus and Fabry-Pérot interference, evidencing phase-coherent transport in the regime of few quantum modes. The approaches developed in this work could help mitigate the role of material and fabrication-induced disorder in semiconductor-based quantum devices.
Original language | English (US) |
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Article number | 015101 |
Journal | Materials for Quantum Technology |
Volume | 4 |
Issue number | 1 |
DOIs | |
State | Published - Mar 1 2024 |
Bibliographical note
Publisher Copyright:© 2024 The Author(s). Published by IOP Publishing Ltd.
Keywords
- few-layers-graphene
- InSb
- nanowire
- quantum transport