TY - GEN
T1 - Effect of elevated implant temperature on amorphization and activation in as-implanted silicon-on-insulator layers
AU - Saenger, Katherine L.
AU - Bedell, Stephen W.
AU - Copel, Matthew
AU - Majumdar, Amlan
AU - Ott, John A.
AU - De Souza, Joel P.
AU - Koester, Steven J.
AU - Wall, Donald R.
AU - Sadana, Devendra K.
PY - 2008
Y1 - 2008
N2 - The ion implantation steps used in fabricating field effect transistors in ultrathin (6 to 30 nm) silicon-on-insulator (UTSOI) substrates present many challenges. Deep source/drain (S/D) implants in UTSOI layers are a particular concern, since it can be difficult to implant the desired dose without amorphizing the entire SOI thickness. In a first study, we investigated the effect of implant temperature (20 to 300 °C) on the sheet resistance (Rs) of 28 nm thick SOI layers implanted with As+ at an energy of 50 keV and a dose of 3 × 1015 /cm2, and found Rs values after activation sharply lower for samples implanted at the highest temperature. In a second study, on 8 nm thick SOI layers implanted with As+ at an energy of 0.75 keV and doses in the range 0.5 to 2 × 1015 /cm5, the benefits of the elevated implantation temperature were less clear. Explanations for these effects, supported by microscopy, medium energy ion scattering (MEIS), and optical reflectance data, will be discussed.
AB - The ion implantation steps used in fabricating field effect transistors in ultrathin (6 to 30 nm) silicon-on-insulator (UTSOI) substrates present many challenges. Deep source/drain (S/D) implants in UTSOI layers are a particular concern, since it can be difficult to implant the desired dose without amorphizing the entire SOI thickness. In a first study, we investigated the effect of implant temperature (20 to 300 °C) on the sheet resistance (Rs) of 28 nm thick SOI layers implanted with As+ at an energy of 50 keV and a dose of 3 × 1015 /cm2, and found Rs values after activation sharply lower for samples implanted at the highest temperature. In a second study, on 8 nm thick SOI layers implanted with As+ at an energy of 0.75 keV and doses in the range 0.5 to 2 × 1015 /cm5, the benefits of the elevated implantation temperature were less clear. Explanations for these effects, supported by microscopy, medium energy ion scattering (MEIS), and optical reflectance data, will be discussed.
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U2 - 10.1557/proc-1070-e05-02
DO - 10.1557/proc-1070-e05-02
M3 - Conference contribution
AN - SCOPUS:62949114411
SN - 9781605110400
T3 - Materials Research Society Symposium Proceedings
SP - 205
EP - 210
BT - Doping Engineering for Front-End Processing
PB - Materials Research Society
T2 - 2008 MRS Spring Meeting
Y2 - 25 March 2008 through 27 March 2008
ER -