Effective mass from microwave photoresistance measurements in GaAs/AlGaAs quantum wells

A. T. Hatke; M. A. Zudov; J. D. Watson; M. J. Manfra; L. N. Pfeiffer; K. W. West

doi:10.1088/1742-6596/456/1/012040

Effective mass from microwave photoresistance measurements in GaAs/AlGaAs quantum wells

A. T. Hatke, M. A. Zudov, J. D. Watson, M. J. Manfra, L. N. Pfeiffer, K. W. West

Physics and Astronomy (Twin Cities)

Research output: Contribution to journal › Conference article › peer-review

Abstract

We have performed microwave photoresistance measurements in high mobility GaAs/AlGaAs quantum wells and investigated the value of the effective mass. The effective mass, obtained from the period of microwave-induced resistance oscillations (MIRO), was found to be about 12 % lower than the band mass in GaAs, m*_b. In contrast, the measured magneto-plasmon dispersion (MPR) revealed an effective mass which is close to m*_b, in accord with previous studies. These findings suggest that, in contrast to MPR, the MIRO dispersion contains corrections due to electron-electron interaction effects.

Original language	English (US)
Article number	012040
Journal	Journal of Physics: Conference Series
Volume	456
Issue number	1
DOIs	https://doi.org/10.1088/1742-6596/456/1/012040
State	Published - 2013
Event	20th International Conference on the Application of High Magnetic Fields in Semiconductor Physics, HMF 2012 - Chamonix Mont Blanc, France Duration: Jul 22 2012 → Jul 27 2012

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title = "Effective mass from microwave photoresistance measurements in GaAs/AlGaAs quantum wells",

abstract = "We have performed microwave photoresistance measurements in high mobility GaAs/AlGaAs quantum wells and investigated the value of the effective mass. The effective mass, obtained from the period of microwave-induced resistance oscillations (MIRO), was found to be about 12 % lower than the band mass in GaAs, m*b. In contrast, the measured magneto-plasmon dispersion (MPR) revealed an effective mass which is close to m*b, in accord with previous studies. These findings suggest that, in contrast to MPR, the MIRO dispersion contains corrections due to electron-electron interaction effects.",

author = "Hatke, {A. T.} and Zudov, {M. A.} and Watson, {J. D.} and Manfra, {M. J.} and Pfeiffer, {L. N.} and West, {K. W.}",

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doi = "10.1088/1742-6596/456/1/012040",

language = "English (US)",

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AU - Hatke, A. T.

AU - Zudov, M. A.

AU - Watson, J. D.

AU - Manfra, M. J.

AU - Pfeiffer, L. N.

AU - West, K. W.

PY - 2013

Y1 - 2013

N2 - We have performed microwave photoresistance measurements in high mobility GaAs/AlGaAs quantum wells and investigated the value of the effective mass. The effective mass, obtained from the period of microwave-induced resistance oscillations (MIRO), was found to be about 12 % lower than the band mass in GaAs, m*b. In contrast, the measured magneto-plasmon dispersion (MPR) revealed an effective mass which is close to m*b, in accord with previous studies. These findings suggest that, in contrast to MPR, the MIRO dispersion contains corrections due to electron-electron interaction effects.

AB - We have performed microwave photoresistance measurements in high mobility GaAs/AlGaAs quantum wells and investigated the value of the effective mass. The effective mass, obtained from the period of microwave-induced resistance oscillations (MIRO), was found to be about 12 % lower than the band mass in GaAs, m*b. In contrast, the measured magneto-plasmon dispersion (MPR) revealed an effective mass which is close to m*b, in accord with previous studies. These findings suggest that, in contrast to MPR, the MIRO dispersion contains corrections due to electron-electron interaction effects.

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JO - Journal of Physics: Conference Series

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Effective mass from microwave photoresistance measurements in GaAs/AlGaAs quantum wells

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