Electrical control of reversible and permanent magnetization reorientation for magnetoelectric memory devices

Tao Wu; Alexandre Bur; Kin Wong; Ping Zhao; Christopher S. Lynch; Pedram Khalili Amiri; Kang L. Wang; Gregory P. Carman

doi:10.1063/1.3605571

Electrical control of reversible and permanent magnetization reorientation for magnetoelectric memory devices

Tao Wu, Alexandre Bur, Kin Wong, Ping Zhao, Christopher S. Lynch, Pedram Khalili Amiri, Kang L. Wang, Gregory P. Carman

Mechanical & Industrial Engineering

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Abstract

We report giant reversible and permanent magnetic anisotropy reorientation between two perpendicular easy axes in a magnetoelectric polycrystalline Ni thin film and (011) oriented [Pb(Mg_1/3Nb_2/3)O ₃]_(1-x)-[PbTiO₃]_x (PMN-PT) heterostructure. The PMN-PT is partially poled prior to Ni film deposition to provide a remanent strain bias. Following Ni deposition and full poling of the sample, two giant remanent strains of equal and opposite values are used to reversibly and permanently reorient the magnetization state of the Ni film. These experimental results are integrated into micromagnetic simulation to demonstrate the usefulness of this approach for magnetoelectric based magnetic random access memory.

Original language	English (US)
Article number	262504
Journal	Applied Physics Letters
Volume	98
Issue number	26
DOIs	https://doi.org/10.1063/1.3605571
State	Published - Jun 27 2011

Bibliographical note

Funding Information:
This work was partially supported by the Air Force Office of Scientific Research (AFOSR) under Grant No. FA9550-09-1-0677 managed by Byung-Lip (Les) Lee, the Swiss National Science Foundation (SNF) under Grant No. PBNEP2-124323, and the DARPA Non-Volatile Magnonic Logic (NVL) Project under Contract No. HR0011-10-C-0153.

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title = "Electrical control of reversible and permanent magnetization reorientation for magnetoelectric memory devices",

abstract = "We report giant reversible and permanent magnetic anisotropy reorientation between two perpendicular easy axes in a magnetoelectric polycrystalline Ni thin film and (011) oriented [Pb(Mg1/3Nb2/3)O 3](1-x)-[PbTiO3]x (PMN-PT) heterostructure. The PMN-PT is partially poled prior to Ni film deposition to provide a remanent strain bias. Following Ni deposition and full poling of the sample, two giant remanent strains of equal and opposite values are used to reversibly and permanently reorient the magnetization state of the Ni film. These experimental results are integrated into micromagnetic simulation to demonstrate the usefulness of this approach for magnetoelectric based magnetic random access memory.",

author = "Tao Wu and Alexandre Bur and Kin Wong and Ping Zhao and Lynch, {Christopher S.} and Amiri, {Pedram Khalili} and Wang, {Kang L.} and Carman, {Gregory P.}",

note = "Funding Information: This work was partially supported by the Air Force Office of Scientific Research (AFOSR) under Grant No. FA9550-09-1-0677 managed by Byung-Lip (Les) Lee, the Swiss National Science Foundation (SNF) under Grant No. PBNEP2-124323, and the DARPA Non-Volatile Magnonic Logic (NVL) Project under Contract No. HR0011-10-C-0153.",

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AU - Wu, Tao

AU - Bur, Alexandre

AU - Wong, Kin

AU - Zhao, Ping

AU - Lynch, Christopher S.

AU - Amiri, Pedram Khalili

AU - Wang, Kang L.

AU - Carman, Gregory P.

N1 - Funding Information: This work was partially supported by the Air Force Office of Scientific Research (AFOSR) under Grant No. FA9550-09-1-0677 managed by Byung-Lip (Les) Lee, the Swiss National Science Foundation (SNF) under Grant No. PBNEP2-124323, and the DARPA Non-Volatile Magnonic Logic (NVL) Project under Contract No. HR0011-10-C-0153.

PY - 2011/6/27

Y1 - 2011/6/27

N2 - We report giant reversible and permanent magnetic anisotropy reorientation between two perpendicular easy axes in a magnetoelectric polycrystalline Ni thin film and (011) oriented [Pb(Mg1/3Nb2/3)O 3](1-x)-[PbTiO3]x (PMN-PT) heterostructure. The PMN-PT is partially poled prior to Ni film deposition to provide a remanent strain bias. Following Ni deposition and full poling of the sample, two giant remanent strains of equal and opposite values are used to reversibly and permanently reorient the magnetization state of the Ni film. These experimental results are integrated into micromagnetic simulation to demonstrate the usefulness of this approach for magnetoelectric based magnetic random access memory.

AB - We report giant reversible and permanent magnetic anisotropy reorientation between two perpendicular easy axes in a magnetoelectric polycrystalline Ni thin film and (011) oriented [Pb(Mg1/3Nb2/3)O 3](1-x)-[PbTiO3]x (PMN-PT) heterostructure. The PMN-PT is partially poled prior to Ni film deposition to provide a remanent strain bias. Following Ni deposition and full poling of the sample, two giant remanent strains of equal and opposite values are used to reversibly and permanently reorient the magnetization state of the Ni film. These experimental results are integrated into micromagnetic simulation to demonstrate the usefulness of this approach for magnetoelectric based magnetic random access memory.

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Electrical control of reversible and permanent magnetization reorientation for magnetoelectric memory devices

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