Electronic structure of the Ni2MnIn/InAs (100) interface relevant to spin injection

K. A. Kilian; R. H. Victora

doi:10.1109/20.951026

Electronic structure of the Ni₂MnIn/InAs (100) interface relevant to spin injection

K. A. Kilian, R. H. Victora

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

20 Scopus citations

Abstract

The ferromagnet-semiconductor system consisting of the Heusler alloy Ni₂MnIn and the semiconductor InAs has been proposed as a likely candidate for use in spin injection-based devices. To study the nature of the interface states in this system, we create a model (100) interface. Using a full-potential electronic structure code with a basis set of Slater-typo orbitals, we have calculated the moments and density of states (DOS) of each atom. We find that the magnetic moments of the Ni₂MnIn are not killed at the interface. We compare the DOS of Ni₂MnIn in the interface model with the DOS of the respective bulk material.

Original language	English (US)
Pages (from-to)	1976-1978
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	37
Issue number	4 I
DOIs	https://doi.org/10.1109/20.951026
State	Published - Jul 2001
Event	8th Joint Magnetism and Magnetic Materials -International Magnetic Conference- (MMM-Intermag) - San Antonio, TX, United States Duration: Jan 7 2001 → Jan 11 2001

Bibliographical note

Funding Information:
Manuscript received October 13, 2000. This work was supported by the MRSEC Program of the National Science Foundation under Award DMR-9809364. The authors are with the Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455 USA (e-mail: {kilian; vic-tora}@ece.umn.edu). Publisher Item Identifier S 0018-9464(01)06184-2.

Keywords

Electronic structure
Interfaces
Spin injection

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Cite this

@article{e60705dfcb6c43b2939f30b9bf41067b,

title = "Electronic structure of the Ni2MnIn/InAs (100) interface relevant to spin injection",

abstract = "The ferromagnet-semiconductor system consisting of the Heusler alloy Ni2MnIn and the semiconductor InAs has been proposed as a likely candidate for use in spin injection-based devices. To study the nature of the interface states in this system, we create a model (100) interface. Using a full-potential electronic structure code with a basis set of Slater-typo orbitals, we have calculated the moments and density of states (DOS) of each atom. We find that the magnetic moments of the Ni2MnIn are not killed at the interface. We compare the DOS of Ni2MnIn in the interface model with the DOS of the respective bulk material.",

keywords = "Electronic structure, Interfaces, Spin injection",

author = "Kilian, {K. A.} and Victora, {R. H.}",

note = "Funding Information: Manuscript received October 13, 2000. This work was supported by the MRSEC Program of the National Science Foundation under Award DMR-9809364. The authors are with the Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455 USA (e-mail: {kilian; vic-tora}@ece.umn.edu). Publisher Item Identifier S 0018-9464(01)06184-2.; 8th Joint Magnetism and Magnetic Materials -International Magnetic Conference- (MMM-Intermag) ; Conference date: 07-01-2001 Through 11-01-2001",

year = "2001",

month = jul,

doi = "10.1109/20.951026",

language = "English (US)",

volume = "37",

pages = "1976--1978",

journal = "IEEE Transactions on Magnetics",

issn = "0018-9464",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4 I",

}

TY - JOUR

T1 - Electronic structure of the Ni2MnIn/InAs (100) interface relevant to spin injection

AU - Kilian, K. A.

AU - Victora, R. H.

N1 - Funding Information: Manuscript received October 13, 2000. This work was supported by the MRSEC Program of the National Science Foundation under Award DMR-9809364. The authors are with the Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455 USA (e-mail: {kilian; vic-tora}@ece.umn.edu). Publisher Item Identifier S 0018-9464(01)06184-2.

PY - 2001/7

Y1 - 2001/7

N2 - The ferromagnet-semiconductor system consisting of the Heusler alloy Ni2MnIn and the semiconductor InAs has been proposed as a likely candidate for use in spin injection-based devices. To study the nature of the interface states in this system, we create a model (100) interface. Using a full-potential electronic structure code with a basis set of Slater-typo orbitals, we have calculated the moments and density of states (DOS) of each atom. We find that the magnetic moments of the Ni2MnIn are not killed at the interface. We compare the DOS of Ni2MnIn in the interface model with the DOS of the respective bulk material.

AB - The ferromagnet-semiconductor system consisting of the Heusler alloy Ni2MnIn and the semiconductor InAs has been proposed as a likely candidate for use in spin injection-based devices. To study the nature of the interface states in this system, we create a model (100) interface. Using a full-potential electronic structure code with a basis set of Slater-typo orbitals, we have calculated the moments and density of states (DOS) of each atom. We find that the magnetic moments of the Ni2MnIn are not killed at the interface. We compare the DOS of Ni2MnIn in the interface model with the DOS of the respective bulk material.

KW - Electronic structure

KW - Interfaces

KW - Spin injection

UR - http://www.scopus.com/inward/record.url?scp=0035386240&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035386240&partnerID=8YFLogxK

U2 - 10.1109/20.951026

DO - 10.1109/20.951026

M3 - Conference article

AN - SCOPUS:0035386240

SN - 0018-9464

VL - 37

SP - 1976

EP - 1978

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

IS - 4 I

T2 - 8th Joint Magnetism and Magnetic Materials -International Magnetic Conference- (MMM-Intermag)

Y2 - 7 January 2001 through 11 January 2001

ER -