Ensemble Monte Carlo simulation of real space transfer (NERFET/CHINT) devices

Engineering & Materials Science

• Charge injection 100%
• Field effect transistors 73%
• Transistors 58%
• Electrons 27%
• Gunn effect 26%
• Semiconductor materials 24%
• Drain current 17%
• Transconductance 16%
• Threshold voltage 15%
• Electric fields 12%
• Experiments 9%
• Substrates 9%
• Electric potential 7%

Chemical Compounds

• Monte Carlo Method 72%
• Statistical Ensemble 68%
• Field Effect 68%
• Resistance 43%
• Drain Current 15%
• Transconductance 15%
• Semiconductor 14%
• Voltage 14%
• Simulation 12%
• Electric Field 8%
• Compound Mobility 7%
• Electron Transfer 6%
• Electron Particle 5%

Physics & Astronomy

• transistors 54%
• field effect transistors 54%
• injection 50%
• simulation 26%
• Gunn effect 14%
• transconductance 10%
• barrier layers 10%
• electron transfer 9%
• valleys 9%
• threshold voltage 9%
• saturation 6%
• electric fields 5%
• electric potential 5%
• electrons 4%