Erratum: Inscription of lateral superlattices in semiconductors using structured light (Journal of Applied Physics (2022) 132 (044301) DOI: 10.1063/5.0102432)

C. Hnatovsky; M. A. Zudov; D. G. Austing; A. Bogan; S. J. Mihailov; M. Hilke; K. W. West; L. N. Pfeiffer; S. A. Studenikin

doi:10.1063/5.0130522

Erratum: Inscription of lateral superlattices in semiconductors using structured light (Journal of Applied Physics (2022) 132 (044301) DOI: 10.1063/5.0102432)

C. Hnatovsky, M. A. Zudov, D. G. Austing, A. Bogan, S. J. Mihailov, M. Hilke, K. W. West, L. N. Pfeiffer, S. A. Studenikin

Research output: Contribution to journal › Comment/debate › peer-review

Abstract

This article was originally published online on 27 July 2022 with incorrect initials for the third author. The author’s name is correct as it appears above. All online versions of this article were corrected on 3 October 2022. AIP Publishing apologizes for this error.

Original language	English (US)
Article number	179901
Journal	Journal of Applied Physics
Volume	132
Issue number	17
DOIs	https://doi.org/10.1063/5.0130522
State	Published - Nov 7 2022
Externally published	Yes

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© 2022 American Institute of Physics Inc.. All rights reserved.

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Hnatovsky, C., Zudov, M. A., Austing, D. G., Bogan, A., Mihailov, S. J., Hilke, M., West, K. W., Pfeiffer, L. N., & Studenikin, S. A. (2022). Erratum: Inscription of lateral superlattices in semiconductors using structured light (Journal of Applied Physics (2022) 132 (044301) DOI: 10.1063/5.0102432). Journal of Applied Physics, 132(17), Article 179901. https://doi.org/10.1063/5.0130522

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Erratum: Inscription of lateral superlattices in semiconductors using structured light (Journal of Applied Physics (2022) 132 (044301) DOI: 10.1063/5.0102432)

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