Erratum: Transparent high-performance thin film transistors from solution-processed SnO2/ZrO2 gel-like precursors (Advanced Materials (2013) 25 (1042-1047) DOI: 10.1002/adma.201202997)

Jaewon Jang; Rungrot Kitsomboonloha; Sarah L. Swisher; Eung Seok Park; Hongki Kang; Vivek Subramanian

doi:10.1002/adma.201402185

Erratum: Transparent high-performance thin film transistors from solution-processed SnO₂/ZrO₂ gel-like precursors (Advanced Materials (2013) 25 (1042-1047) DOI: 10.1002/adma.201202997)

Jaewon Jang, Rungrot Kitsomboonloha, Sarah L. Swisher, Eung Seok Park, Hongki Kang, Vivek Subramanian

Electrical and Computer Engineering

Research output: Contribution to journal › Comment/debate › peer-review

4 Scopus citations

Original language	English (US)
Pages (from-to)	4412
Number of pages	1
Journal	Advanced Materials
Volume	26
Issue number	26
DOIs	https://doi.org/10.1002/adma.201402185
State	Published - Jul 9 2014

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Erratum: Transparent high-performance thin film transistors from solution-processed SnO₂/ZrO₂ gel-like precursors (Advanced Materials (2013) 25 (1042-1047) DOI: 10.1002/adma.201202997). / Jang, Jaewon; Kitsomboonloha, Rungrot; Swisher, Sarah L. et al.
In: Advanced Materials, Vol. 26, No. 26, 09.07.2014, p. 4412.

Research output: Contribution to journal › Comment/debate › peer-review

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Erratum: Transparent high-performance thin film transistors from solution-processed SnO2/ZrO2 gel-like precursors (Advanced Materials (2013) 25 (1042-1047) DOI: 10.1002/adma.201202997)

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Erratum: Transparent high-performance thin film transistors from solution-processed SnO₂/ZrO₂ gel-like precursors (Advanced Materials (2013) 25 (1042-1047) DOI: 10.1002/adma.201202997)