Experimental examination of MEMS microactuator material issues

T. G. Cooney; D. E. Glumac; W. P. Robbins; L. F. Francis

Experimental examination of MEMS microactuator material issues

T. G. Cooney, D. E. Glumac, W. P. Robbins, L. F. Francis

Research output: Contribution to journal › Conference article › peer-review

Abstract

In the study, thermally induced interactions between materials in complex microactuator structures were investigated. The device structure contained a combination of a piezoelectric layer (lead zirconate titanate-PZT) an electrode with adhesion layer (Pt/Ti), buffer layer (SiO₂ or TiO₂), structural material (polysilicon and/or silicon nitride), and sacrificial oxide (SiO₂). XRD results showed significant platinum and titanium silicide formation in the Pt/Ti electrode at 700°C (PZT crystallization temperature) on both polysilicon and silicon nitride structural materials when no buffer layer was used. Auger analysis shows that Ti adhesion layer oxidizes, that measured levels of silicon increase in the electrode zone, and that electrode elements diffuse into the structural material.

Original language	English (US)
Pages (from-to)	401-406
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	360
State	Published - Jan 1 1995
Event	Proceedings of the 1994 MRS Fall Meeting - Boston, MA, USA Duration: Nov 28 1994 → Nov 30 1994

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@article{accb8cec58ea4d04ba1e96c563e29d9a,

title = "Experimental examination of MEMS microactuator material issues",

abstract = "In the study, thermally induced interactions between materials in complex microactuator structures were investigated. The device structure contained a combination of a piezoelectric layer (lead zirconate titanate-PZT) an electrode with adhesion layer (Pt/Ti), buffer layer (SiO2 or TiO2), structural material (polysilicon and/or silicon nitride), and sacrificial oxide (SiO2). XRD results showed significant platinum and titanium silicide formation in the Pt/Ti electrode at 700°C (PZT crystallization temperature) on both polysilicon and silicon nitride structural materials when no buffer layer was used. Auger analysis shows that Ti adhesion layer oxidizes, that measured levels of silicon increase in the electrode zone, and that electrode elements diffuse into the structural material.",

author = "Cooney, {T. G.} and Glumac, {D. E.} and Robbins, {W. P.} and Francis, {L. F.}",

year = "1995",

month = jan,

day = "1",

language = "English (US)",

volume = "360",

pages = "401--406",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1994 MRS Fall Meeting ; Conference date: 28-11-1994 Through 30-11-1994",

}

TY - JOUR

T1 - Experimental examination of MEMS microactuator material issues

AU - Cooney, T. G.

AU - Glumac, D. E.

AU - Robbins, W. P.

AU - Francis, L. F.

PY - 1995/1/1

Y1 - 1995/1/1

N2 - In the study, thermally induced interactions between materials in complex microactuator structures were investigated. The device structure contained a combination of a piezoelectric layer (lead zirconate titanate-PZT) an electrode with adhesion layer (Pt/Ti), buffer layer (SiO2 or TiO2), structural material (polysilicon and/or silicon nitride), and sacrificial oxide (SiO2). XRD results showed significant platinum and titanium silicide formation in the Pt/Ti electrode at 700°C (PZT crystallization temperature) on both polysilicon and silicon nitride structural materials when no buffer layer was used. Auger analysis shows that Ti adhesion layer oxidizes, that measured levels of silicon increase in the electrode zone, and that electrode elements diffuse into the structural material.

AB - In the study, thermally induced interactions between materials in complex microactuator structures were investigated. The device structure contained a combination of a piezoelectric layer (lead zirconate titanate-PZT) an electrode with adhesion layer (Pt/Ti), buffer layer (SiO2 or TiO2), structural material (polysilicon and/or silicon nitride), and sacrificial oxide (SiO2). XRD results showed significant platinum and titanium silicide formation in the Pt/Ti electrode at 700°C (PZT crystallization temperature) on both polysilicon and silicon nitride structural materials when no buffer layer was used. Auger analysis shows that Ti adhesion layer oxidizes, that measured levels of silicon increase in the electrode zone, and that electrode elements diffuse into the structural material.

UR - http://www.scopus.com/inward/record.url?scp=0029212151&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029212151&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0029212151

SN - 0272-9172

VL - 360

SP - 401

EP - 406

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1994 MRS Fall Meeting

Y2 - 28 November 1994 through 30 November 1994

ER -

Experimental examination of MEMS microactuator material issues

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