Exploiting negative differential resistance in monolayer graphene FETs for high voltage gains

Roberto Grassi; Antonio Gnudi; Valerio Di Lecce; Elena Gnani; Susanna Reggiani; Giorgio Baccarani

doi:10.1109/TED.2013.2294113

Exploiting negative differential resistance in monolayer graphene FETs for high voltage gains

Roberto Grassi, Antonio Gnudi, Valerio Di Lecce, Elena Gnani, Susanna Reggiani, Giorgio Baccarani

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Through self-consistent quantum transport simulations, we evaluate the RF performance of monolayer graphene field-effect transistors in the bias region of negative output differential resistance. We show that, compared with the region of quasi-saturation, a voltage gain larger than 10 can be obtained, at the cost of a decrease in the maximum oscillation frequency of about a factor of 1.5-3 and the need for a careful circuit stabilization.

Original language	English (US)
Article number	6689297
Pages (from-to)	617-624
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	61
Issue number	2
DOIs	https://doi.org/10.1109/TED.2013.2294113
State	Published - Feb 2014

Keywords

Negative differential resistance (NDR)
Terahertz operation
Terms-Graphene field-effect transistor (GFET)
voltage amplifier

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abstract = "Through self-consistent quantum transport simulations, we evaluate the RF performance of monolayer graphene field-effect transistors in the bias region of negative output differential resistance. We show that, compared with the region of quasi-saturation, a voltage gain larger than 10 can be obtained, at the cost of a decrease in the maximum oscillation frequency of about a factor of 1.5-3 and the need for a careful circuit stabilization.",

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AU - Lecce, Valerio Di

AU - Gnani, Elena

AU - Reggiani, Susanna

AU - Baccarani, Giorgio

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AB - Through self-consistent quantum transport simulations, we evaluate the RF performance of monolayer graphene field-effect transistors in the bias region of negative output differential resistance. We show that, compared with the region of quasi-saturation, a voltage gain larger than 10 can be obtained, at the cost of a decrease in the maximum oscillation frequency of about a factor of 1.5-3 and the need for a careful circuit stabilization.

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KW - voltage amplifier

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Exploiting negative differential resistance in monolayer graphene FETs for high voltage gains

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Keywords

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