Fabrication and Mobility Characteristics of Ultra-thin Strained Si Directly on Insulator (SSDOI) MOSFETs

K. Rim; K. Chan; L. Shi; D. Boyd; J. Ott; N. Klymko; F. Cardone; L. Tai; S. Koester; M. Cobb; D. Canaperi; B. To; E. Duch; I. Babich; R. Carruthers; P. Saunders; G. Walker; Y. Zhang; M. Steen; M. Ieong

Fabrication and Mobility Characteristics of Ultra-thin Strained Si Directly on Insulator (SSDOI) MOSFETs

K. Rim, K. Chan, L. Shi, D. Boyd, J. Ott, N. Klymko, F. Cardone, L. Tai, S. Koester, M. Cobb, D. Canaperi, B. To, E. Duch, I. Babich, R. Carruthers, P. Saunders, G. Walker, Y. Zhang, M. Steen, M. Ieong

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

144 Scopus citations

Abstract

A tensile-strained Si layer was transferred to form an ultra-thin (<20 nm) strained Si directly on insulator (SSDOI) structure. MOSFETs were fabricated, and for the first time, electron and hole mobility enhancements were demonstrated on strained Si directly on insulator structures with no SiGe layer present under the strained Si channel.

Original language	English (US)
Pages (from-to)	49-52
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
State	Published - 2003
Event	IEEE International Electron Devices Meeting - Washington, DC, United States Duration: Dec 8 2003 → Dec 10 2003

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Rim, K., Chan, K., Shi, L., Boyd, D., Ott, J., Klymko, N., Cardone, F., Tai, L., Koester, S., Cobb, M., Canaperi, D., To, B., Duch, E., Babich, I., Carruthers, R., Saunders, P., Walker, G., Zhang, Y., Steen, M., & Ieong, M. (2003). Fabrication and Mobility Characteristics of Ultra-thin Strained Si Directly on Insulator (SSDOI) MOSFETs. Technical Digest - International Electron Devices Meeting, 49-52.

Rim, K, Chan, K, Shi, L, Boyd, D, Ott, J, Klymko, N, Cardone, F, Tai, L, Koester, S, Cobb, M, Canaperi, D, To, B, Duch, E, Babich, I, Carruthers, R, Saunders, P, Walker, G, Zhang, Y, Steen, M & Ieong, M 2003, 'Fabrication and Mobility Characteristics of Ultra-thin Strained Si Directly on Insulator (SSDOI) MOSFETs', Technical Digest - International Electron Devices Meeting, pp. 49-52.

@article{e1253d7c38974c6895be90c07e15471d,

title = "Fabrication and Mobility Characteristics of Ultra-thin Strained Si Directly on Insulator (SSDOI) MOSFETs",

abstract = "A tensile-strained Si layer was transferred to form an ultra-thin (<20 nm) strained Si directly on insulator (SSDOI) structure. MOSFETs were fabricated, and for the first time, electron and hole mobility enhancements were demonstrated on strained Si directly on insulator structures with no SiGe layer present under the strained Si channel.",

author = "K. Rim and K. Chan and L. Shi and D. Boyd and J. Ott and N. Klymko and F. Cardone and L. Tai and S. Koester and M. Cobb and D. Canaperi and B. To and E. Duch and I. Babich and R. Carruthers and P. Saunders and G. Walker and Y. Zhang and M. Steen and M. Ieong",

year = "2003",

language = "English (US)",

pages = "49--52",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "IEEE International Electron Devices Meeting ; Conference date: 08-12-2003 Through 10-12-2003",

}

TY - JOUR

T1 - Fabrication and Mobility Characteristics of Ultra-thin Strained Si Directly on Insulator (SSDOI) MOSFETs

AU - Rim, K.

AU - Chan, K.

AU - Shi, L.

AU - Boyd, D.

AU - Ott, J.

AU - Klymko, N.

AU - Cardone, F.

AU - Tai, L.

AU - Koester, S.

AU - Cobb, M.

AU - Canaperi, D.

AU - To, B.

AU - Duch, E.

AU - Babich, I.

AU - Carruthers, R.

AU - Saunders, P.

AU - Walker, G.

AU - Zhang, Y.

AU - Steen, M.

AU - Ieong, M.

PY - 2003

Y1 - 2003

N2 - A tensile-strained Si layer was transferred to form an ultra-thin (<20 nm) strained Si directly on insulator (SSDOI) structure. MOSFETs were fabricated, and for the first time, electron and hole mobility enhancements were demonstrated on strained Si directly on insulator structures with no SiGe layer present under the strained Si channel.

AB - A tensile-strained Si layer was transferred to form an ultra-thin (<20 nm) strained Si directly on insulator (SSDOI) structure. MOSFETs were fabricated, and for the first time, electron and hole mobility enhancements were demonstrated on strained Si directly on insulator structures with no SiGe layer present under the strained Si channel.

UR - http://www.scopus.com/inward/record.url?scp=0842309839&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0842309839&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0842309839

SN - 0163-1918

SP - 49

EP - 52

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - IEEE International Electron Devices Meeting

Y2 - 8 December 2003 through 10 December 2003

ER -

Fabrication and Mobility Characteristics of Ultra-thin Strained Si Directly on Insulator (SSDOI) MOSFETs

Abstract

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