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Abstract
Here we report field-effect modulation of solution electrochemistry at 5 nm thick ZnO working electrodes prepared on SiO2/degenerately doped Si gates. We find that ultrathin ZnO behaves like a 2D semiconductor, in which charge carriers electrostatically induced by the back gate lead to band edge shift at the front electrode/electrolyte interface. This, in turn, manipulates the charge transfer kinetics on the electrode at a given electrode potential. Experimental results and the proposed model indicate that band edge alignment can be effectively modulated by 0.1-0.4 eV depending on the density of states in the semiconductor and the capacitance of the gate/dielectric stack.
Original language | English (US) |
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Pages (from-to) | 7220-7223 |
Number of pages | 4 |
Journal | Journal of the American Chemical Society |
Volume | 138 |
Issue number | 23 |
DOIs | |
State | Published - Jun 15 2016 |
Bibliographical note
Publisher Copyright:© 2016 American Chemical Society.
How much support was provided by MRSEC?
- Shared
Reporting period for MRSEC
- Period 3
PubMed: MeSH publication types
- Journal Article
Fingerprint
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MRSEC IRG-2: Sustainable Nanocrystal Materials
Kortshagen, U. R., Aydil, E. S., Campbell, S. A., Francis, L. F., Haynes, C. L., Hogan, C., Mkhoyan, A., Shklovskii, B. I. & Wang, X.
9/1/98 → …
Project: Research project
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