Field-Free-Switching State Diagram of Perpendicular Magnetization Subjected to Conventional and Unconventional Spin-Orbit Torques

D. J.P. De Sousa, P. M. Haney, J. P. Wang, Tony Low

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

The lack of certain crystalline symmetries in strong spin-orbit-coupled nonmagnetic materials allows for the existence of unconventional spin Hall responses, with electrically generated transverse spin currents possessing collinear flow and spin directions. The injection of such spin currents into an adjacent ferromagnetic layer can excite magnetization dynamics via unconventional spin-orbit torques, leading to deterministic switching in ferromagnets with perpendicular magnetic anisotropy. We study the interplay between conventional and unconventional spin-orbit torques on the magnetization dynamics of a perpendicular ferromagnet in the small intrinsic damping limit, and identify a rich set of dynamical regimes that includes deterministic and probabilistic switching, precessional and pinning states. Contrary to common belief, we find that there exists a critical conventional spin Hall angle, beyond which deterministic magnetization switching transitions to a precessional or pinned state. Conversely, we show that larger unconventional spin Hall angle is generally beneficial for deterministic switching. We derive an approximate expression that qualitatively describes the state-diagram boundary between the full deterministic switching and precessional states and discuss a criterion for searching symmetry-broken spin Hall materials in order to maximize switching efficiency. Our work offers a roadmap towards energy-efficient spintronic devices, which might open the door for applications in advanced in-memory computing technologies.

Original languageEnglish (US)
Article number054020
JournalPhysical Review Applied
Volume18
Issue number5
DOIs
StatePublished - Nov 2022

Bibliographical note

Funding Information:
D.S., J.P.W., and T.L. are partially supported by the SMART, one of seven centers of nCORE, a Semiconductor Research Corporation program, sponsored by National Institute of Standards and Technology (NIST) and by the DARPA ERI FRANC program under HR001117S0056-FP-042. D.S. thanks T.J. Peterson for helpful discussions.

Publisher Copyright:
© 2022 American Physical Society. US.

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