Flat-Band Voltage Dependence on Channel Length in Short-Channel Threshold Model

J. S T Huang; J. W. Schrankler

doi:10.1109/T-ED.1985.22062

Flat-Band Voltage Dependence on Channel Length in Short-Channel Threshold Model

J. S T Huang, J. W. Schrankler

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Abstract

This paper describes a modified short-channel threshold model that incorporates the flat-band voltage dependence on the channel length. Results obtained from the threshold voltage measurement on n-channel MOSFET's before and after total dose radiation are in good agreement with the proposed model.

Original language	English (US)
Pages (from-to)	1001-1002
Number of pages	2
Journal	IEEE Transactions on Electron Devices
Volume	32
Issue number	5
DOIs	https://doi.org/10.1109/T-ED.1985.22062
State	Published - May 1985

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abstract = "This paper describes a modified short-channel threshold model that incorporates the flat-band voltage dependence on the channel length. Results obtained from the threshold voltage measurement on n-channel MOSFET's before and after total dose radiation are in good agreement with the proposed model.",

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Flat-Band Voltage Dependence on Channel Length in Short-Channel Threshold Model

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