GaAs FET RF SWITCHES.

Anand Gopinath; J. Bruce Rankin

doi:10.1109/t-ed.1985.22111

GaAs FET RF SWITCHES.

Anand Gopinath, J. Bruce Rankin

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

45 Scopus citations

Abstract

The device parameter dependence of GaAs FET switch performance has been determined analytically and by two-dimensional simulation. FET switch design may be optimized to maximize the value of the switch quality factor while retaining the power handling capacity. Expressions for both the quality factor and power handling capacity are derived in terms of device parameters.

Original language	English (US)
Pages (from-to)	1272-1278
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	ED-32
Issue number	7
DOIs	https://doi.org/10.1109/t-ed.1985.22111
State	Published - 1985

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title = "GaAs FET RF SWITCHES.",

abstract = "The device parameter dependence of GaAs FET switch performance has been determined analytically and by two-dimensional simulation. FET switch design may be optimized to maximize the value of the switch quality factor while retaining the power handling capacity. Expressions for both the quality factor and power handling capacity are derived in terms of device parameters.",

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AB - The device parameter dependence of GaAs FET switch performance has been determined analytically and by two-dimensional simulation. FET switch design may be optimized to maximize the value of the switch quality factor while retaining the power handling capacity. Expressions for both the quality factor and power handling capacity are derived in terms of device parameters.

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GaAs FET RF SWITCHES.

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