Gate-tunable giant tunneling electroresistance in van der Waals ferroelectric tunneling junctions

Qinqin Wang; Ti Xie; Nicholas A. Blumenschein; Zhihao Song; Aubrey T. Hanbicki; Michael A. Susner; Benjamin S. Conner; Tony Low; Jian Ping Wang; Adam L. Friedman; Cheng Gong

doi:10.1016/j.mseb.2022.115829

Gate-tunable giant tunneling electroresistance in van der Waals ferroelectric tunneling junctions

Qinqin Wang, Ti Xie, Nicholas A. Blumenschein, Zhihao Song, Aubrey T. Hanbicki, Michael A. Susner, Benjamin S. Conner, Tony Low, Jian Ping Wang, Adam L. Friedman, Cheng Gong

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Ferroelectric tunneling junctions (FTJs) have attracted great interest due to their potential applications in non-volatile memories and neurosynaptic computing. In this work, high performance FTJs constructed with graphene and two-dimensional (2D) layered ferroelectric CuInP₂S₆ (CIPS) with out-of-plane polarization have been demonstrated. These van der Waals (vdW) heterostructure tunneling devices show tunneling electroresistance (TER) up to 10⁷. Furthermore, the FTJs exhibit noticeable gate tunability, for which the on-state tunneling current can increase by 100% by applying a 50 V gate voltage through the conventional 260-nm-thick SiO₂ dielectric layer. Our demonstration of gate-tunable, giant tunneling electroresistance highlights its potential in energy-efficient non-volatile memories and computing-in-memory functions.

Original language	English (US)
Article number	115829
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	283
DOIs	https://doi.org/10.1016/j.mseb.2022.115829
State	Published - Sep 2022
Externally published	Yes

Bibliographical note

Funding Information:
C.G. acknowledges the support from the startup grant from the University of Maryland, College Park, and the grants from Northrop Grumman Mission Systems’ University Research Program, Naval Air Warfare Center Aircraft Division, and Army Research Laboratory cooperative agreement number W911NF-19-2-0181. J.P.W. acknowledges the support of Robert F. Hartmann Endowed Chair Professorship. M.A.S. and B.S.C. acknowledge support through the United States Air Force Office of Scientific Research (AFOSR) LRIR 18RQCOR100 and AOARD-MOST Grant Number F4GGA21207H002. B.S.C. further acknowledges the National Research Council Senior Fellowship award.

Publisher Copyright:
© 2022 Elsevier B.V.

Keywords

Ferroelectric tunneling junctions (FTJs)
Gate-tunable
Tunneling electroresistance (TER) effect

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Wang, Q., Xie, T., Blumenschein, N. A., Song, Z., Hanbicki, A. T., Susner, M. A., Conner, B. S., Low, T., Wang, J. P., Friedman, A. L., & Gong, C. (2022). Gate-tunable giant tunneling electroresistance in van der Waals ferroelectric tunneling junctions. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 283, Article 115829. https://doi.org/10.1016/j.mseb.2022.115829

Wang, Q, Xie, T, Blumenschein, NA, Song, Z, Hanbicki, AT, Susner, MA, Conner, BS, Low, T , Wang, JP, Friedman, AL & Gong, C 2022, 'Gate-tunable giant tunneling electroresistance in van der Waals ferroelectric tunneling junctions', Materials Science and Engineering B: Solid-State Materials for Advanced Technology, vol. 283, 115829. https://doi.org/10.1016/j.mseb.2022.115829

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title = "Gate-tunable giant tunneling electroresistance in van der Waals ferroelectric tunneling junctions",

abstract = "Ferroelectric tunneling junctions (FTJs) have attracted great interest due to their potential applications in non-volatile memories and neurosynaptic computing. In this work, high performance FTJs constructed with graphene and two-dimensional (2D) layered ferroelectric CuInP2S6 (CIPS) with out-of-plane polarization have been demonstrated. These van der Waals (vdW) heterostructure tunneling devices show tunneling electroresistance (TER) up to 107. Furthermore, the FTJs exhibit noticeable gate tunability, for which the on-state tunneling current can increase by 100% by applying a 50 V gate voltage through the conventional 260-nm-thick SiO2 dielectric layer. Our demonstration of gate-tunable, giant tunneling electroresistance highlights its potential in energy-efficient non-volatile memories and computing-in-memory functions.",

keywords = "Ferroelectric tunneling junctions (FTJs), Gate-tunable, Tunneling electroresistance (TER) effect",

author = "Qinqin Wang and Ti Xie and Blumenschein, {Nicholas A.} and Zhihao Song and Hanbicki, {Aubrey T.} and Susner, {Michael A.} and Conner, {Benjamin S.} and Tony Low and Wang, {Jian Ping} and Friedman, {Adam L.} and Cheng Gong",

note = "Funding Information: C.G. acknowledges the support from the startup grant from the University of Maryland, College Park, and the grants from Northrop Grumman Mission Systems{\textquoteright} University Research Program, Naval Air Warfare Center Aircraft Division, and Army Research Laboratory cooperative agreement number W911NF-19-2-0181. J.P.W. acknowledges the support of Robert F. Hartmann Endowed Chair Professorship. M.A.S. and B.S.C. acknowledge support through the United States Air Force Office of Scientific Research (AFOSR) LRIR 18RQCOR100 and AOARD-MOST Grant Number F4GGA21207H002. B.S.C. further acknowledges the National Research Council Senior Fellowship award. Publisher Copyright: {\textcopyright} 2022 Elsevier B.V.",

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AU - Wang, Qinqin

AU - Xie, Ti

AU - Blumenschein, Nicholas A.

AU - Song, Zhihao

AU - Hanbicki, Aubrey T.

AU - Susner, Michael A.

AU - Conner, Benjamin S.

AU - Low, Tony

AU - Wang, Jian Ping

AU - Friedman, Adam L.

AU - Gong, Cheng

N1 - Funding Information: C.G. acknowledges the support from the startup grant from the University of Maryland, College Park, and the grants from Northrop Grumman Mission Systems’ University Research Program, Naval Air Warfare Center Aircraft Division, and Army Research Laboratory cooperative agreement number W911NF-19-2-0181. J.P.W. acknowledges the support of Robert F. Hartmann Endowed Chair Professorship. M.A.S. and B.S.C. acknowledge support through the United States Air Force Office of Scientific Research (AFOSR) LRIR 18RQCOR100 and AOARD-MOST Grant Number F4GGA21207H002. B.S.C. further acknowledges the National Research Council Senior Fellowship award. Publisher Copyright: © 2022 Elsevier B.V.

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N2 - Ferroelectric tunneling junctions (FTJs) have attracted great interest due to their potential applications in non-volatile memories and neurosynaptic computing. In this work, high performance FTJs constructed with graphene and two-dimensional (2D) layered ferroelectric CuInP2S6 (CIPS) with out-of-plane polarization have been demonstrated. These van der Waals (vdW) heterostructure tunneling devices show tunneling electroresistance (TER) up to 107. Furthermore, the FTJs exhibit noticeable gate tunability, for which the on-state tunneling current can increase by 100% by applying a 50 V gate voltage through the conventional 260-nm-thick SiO2 dielectric layer. Our demonstration of gate-tunable, giant tunneling electroresistance highlights its potential in energy-efficient non-volatile memories and computing-in-memory functions.

AB - Ferroelectric tunneling junctions (FTJs) have attracted great interest due to their potential applications in non-volatile memories and neurosynaptic computing. In this work, high performance FTJs constructed with graphene and two-dimensional (2D) layered ferroelectric CuInP2S6 (CIPS) with out-of-plane polarization have been demonstrated. These van der Waals (vdW) heterostructure tunneling devices show tunneling electroresistance (TER) up to 107. Furthermore, the FTJs exhibit noticeable gate tunability, for which the on-state tunneling current can increase by 100% by applying a 50 V gate voltage through the conventional 260-nm-thick SiO2 dielectric layer. Our demonstration of gate-tunable, giant tunneling electroresistance highlights its potential in energy-efficient non-volatile memories and computing-in-memory functions.

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KW - Gate-tunable

KW - Tunneling electroresistance (TER) effect

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Gate-tunable giant tunneling electroresistance in van der Waals ferroelectric tunneling junctions

Abstract

Bibliographical note

Keywords

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