Hafnium titanate as a high-k gate insulator

F. Chen; M. Li; V. Afanasev; W. L. Gladfelter; S. A. Campbell

Hafnium titanate as a high-k gate insulator

F. Chen, M. Li, V. Afanasev, W. L. Gladfelter, S. A. Campbell

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Hf _xTi _1-xO ₂ films have been deposited by chemical vapor deposition. The permittivity of the film depends on the composition, but films with a permittivity of approximately 50 have been obtained. The films do not appear to undergo phase separation up to at least 1000°C. The interface properties and charge trapping appear to depend on composition. For films with approximately equal Hf and Ti concentration, transistor characteristics and inversion layer mobilities appear to be roughly comparable to those obtained when using pure HfO ₂, however the films in this report had thick interfacial layers, which may affect the transistor properties.

Original language	English (US)
Title of host publication	Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium
Editors	M.C. Ozturk, L.J. Chen, P.J. Timans, F. Roozeboom, E.P. Gusev
Pages	278-285
Number of pages	8
Volume	1
State	Published - Oct 28 2004
Event	Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium - San Antonio, TX, United States Duration: May 10 2004 → May 12 2004

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Other	Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium
Country/Territory	United States
City	San Antonio, TX
Period	5/10/04 → 5/12/04

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Hafnium titanate as a high-k gate insulator. / Chen, F.; Li, M.; Afanasev, V. et al.
Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium. ed. / M.C. Ozturk; L.J. Chen; P.J. Timans; F. Roozeboom; E.P. Gusev. Vol. 1 2004. p. 278-285.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chen, F, Li, M, Afanasev, V, Gladfelter, WL & Campbell, SA 2004, Hafnium titanate as a high-k gate insulator. in MC Ozturk, LJ Chen, PJ Timans, F Roozeboom & EP Gusev (eds), Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium. vol. 1, pp. 278-285, Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium, San Antonio, TX, United States, 5/10/04.

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Hafnium titanate as a high-k gate insulator

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