HfO2-based insulating stacks on 4H-SiC(0001)

V. V. Afanas'ev; A. Stesmans; F. Chen; S. A. Campbell; R. Smith

doi:10.1063/1.1538310

HfO₂-based insulating stacks on 4H-SiC(0001)

V. V. Afanas'ev, A. Stesmans, F. Chen, S. A. Campbell, R. Smith

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

87 Scopus citations

Abstract

The deposition of HfO₂-based insulating stacks on 4H-SiC(0001) was demonstrated. The stack combined the high dielectric permittivity of HfO₂ with the high quality of the ultrathin SiO₂/SiC interface and associated high energy barriers for electron and hole injection from SiC. The high dielectric permittivity of HfO₂ allowed the application of high electric fields to the Sic surface, while keeping the strength of the field in the insulator at a moderate level.

Original language	English (US)
Pages (from-to)	922-924
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	6
DOIs	https://doi.org/10.1063/1.1538310
State	Published - Feb 10 2003

Access

10.1063/1.1538310

OpenUrl availability

Full text

Cite this

@article{cba6e7bcd67f442397ed3b7f78f8b164,

title = "HfO2-based insulating stacks on 4H-SiC(0001)",

abstract = "The deposition of HfO2-based insulating stacks on 4H-SiC(0001) was demonstrated. The stack combined the high dielectric permittivity of HfO2 with the high quality of the ultrathin SiO2/SiC interface and associated high energy barriers for electron and hole injection from SiC. The high dielectric permittivity of HfO2 allowed the application of high electric fields to the Sic surface, while keeping the strength of the field in the insulator at a moderate level.",

author = "Afanas'ev, {V. V.} and A. Stesmans and F. Chen and Campbell, {S. A.} and R. Smith",

year = "2003",

month = feb,

day = "10",

doi = "10.1063/1.1538310",

language = "English (US)",

volume = "82",

pages = "922--924",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "6",

}

TY - JOUR

T1 - HfO2-based insulating stacks on 4H-SiC(0001)

AU - Afanas'ev, V. V.

AU - Stesmans, A.

AU - Chen, F.

AU - Campbell, S. A.

AU - Smith, R.

PY - 2003/2/10

Y1 - 2003/2/10

N2 - The deposition of HfO2-based insulating stacks on 4H-SiC(0001) was demonstrated. The stack combined the high dielectric permittivity of HfO2 with the high quality of the ultrathin SiO2/SiC interface and associated high energy barriers for electron and hole injection from SiC. The high dielectric permittivity of HfO2 allowed the application of high electric fields to the Sic surface, while keeping the strength of the field in the insulator at a moderate level.

AB - The deposition of HfO2-based insulating stacks on 4H-SiC(0001) was demonstrated. The stack combined the high dielectric permittivity of HfO2 with the high quality of the ultrathin SiO2/SiC interface and associated high energy barriers for electron and hole injection from SiC. The high dielectric permittivity of HfO2 allowed the application of high electric fields to the Sic surface, while keeping the strength of the field in the insulator at a moderate level.

UR - http://www.scopus.com/inward/record.url?scp=0037428807&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037428807&partnerID=8YFLogxK

U2 - 10.1063/1.1538310

DO - 10.1063/1.1538310

M3 - Article

AN - SCOPUS:0037428807

SN - 0003-6951

VL - 82

SP - 922

EP - 924

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

ER -

HfO₂-based insulating stacks on 4H-SiC(0001)

Abstract

Access

OpenUrl availability

Other files and links

Fingerprint

Cite this