High-fT n-MODFETs fabricated on Si/SiGe heterostructures grown by UHV-CVD

S. J. Koester; J. O. Chu; R. A. Groves

doi:10.1049/el:19990075

High-f_T n-MODFETs fabricated on Si/SiGe heterostructures grown by UHV-CVD

S. J. Koester, J. O. Chu, R. A. Groves

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Abstract

The authors present high-frequency results of n-channel MODFETs fabricated on high-mobility Si/SiGe strained layer heterostructures grown by ultrahigh vacuum chemical vapour deposition (UHV-CVD). Devices with gate length L_g = 0.2μm and drain-source separation L_ds = 0.9μm displayed unity current gain cutoff frequencies as high as f_T = 45GHz (47GHz) at V2 = +0.6V (+1.5V). Similar devices with L_g = 0.2μm and L_ds = 0.5μm produced values of f_T= 61 GHz (62GHz) at V_ds = +0.6V (+1.0V). The value f_T = 62GHz is the highest unity current gain cutoff frequency reported to date for an n-channel strained Si MODFET.

Original language	English (US)
Pages (from-to)	86-87
Number of pages	2
Journal	Electronics Letters
Volume	35
Issue number	1
DOIs	https://doi.org/10.1049/el:19990075
State	Published - Jan 7 1999
Externally published	Yes

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title = "High-fT n-MODFETs fabricated on Si/SiGe heterostructures grown by UHV-CVD",

abstract = "The authors present high-frequency results of n-channel MODFETs fabricated on high-mobility Si/SiGe strained layer heterostructures grown by ultrahigh vacuum chemical vapour deposition (UHV-CVD). Devices with gate length Lg = 0.2μm and drain-source separation Lds = 0.9μm displayed unity current gain cutoff frequencies as high as fT = 45GHz (47GHz) at V2 = +0.6V (+1.5V). Similar devices with Lg = 0.2μm and Lds = 0.5μm produced values of fT= 61 GHz (62GHz) at Vds = +0.6V (+1.0V). The value fT = 62GHz is the highest unity current gain cutoff frequency reported to date for an n-channel strained Si MODFET.",

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AU - Koester, S. J.

AU - Chu, J. O.

AU - Groves, R. A.

PY - 1999/1/7

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N2 - The authors present high-frequency results of n-channel MODFETs fabricated on high-mobility Si/SiGe strained layer heterostructures grown by ultrahigh vacuum chemical vapour deposition (UHV-CVD). Devices with gate length Lg = 0.2μm and drain-source separation Lds = 0.9μm displayed unity current gain cutoff frequencies as high as fT = 45GHz (47GHz) at V2 = +0.6V (+1.5V). Similar devices with Lg = 0.2μm and Lds = 0.5μm produced values of fT= 61 GHz (62GHz) at Vds = +0.6V (+1.0V). The value fT = 62GHz is the highest unity current gain cutoff frequency reported to date for an n-channel strained Si MODFET.

AB - The authors present high-frequency results of n-channel MODFETs fabricated on high-mobility Si/SiGe strained layer heterostructures grown by ultrahigh vacuum chemical vapour deposition (UHV-CVD). Devices with gate length Lg = 0.2μm and drain-source separation Lds = 0.9μm displayed unity current gain cutoff frequencies as high as fT = 45GHz (47GHz) at V2 = +0.6V (+1.5V). Similar devices with Lg = 0.2μm and Lds = 0.5μm produced values of fT= 61 GHz (62GHz) at Vds = +0.6V (+1.0V). The value fT = 62GHz is the highest unity current gain cutoff frequency reported to date for an n-channel strained Si MODFET.

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High-f_T n-MODFETs fabricated on Si/SiGe heterostructures grown by UHV-CVD

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