@inproceedings{86a42a0b91124b7f8fa9868fe9bdc38d,
title = "High mobility III-V channel MOSFETs for post-Si CMOS applications",
abstract = "III-V compound semiconductors have received renewed attention as the channel materials for future generation CMOS technology. High performance long-channel GaAs MOSFETs and short-channel InGaAs MOSFETs are demonstrated. High current of 960 μA/μm and transconductance of 793 μS/μm have been achieved. Scaling behavior has been investigated experimentally down to 80 nm for the first time in III-V MOSFETs. Good scaling behavior is observed for on-state current, transconductance, as well as the virtual source velocity.",
keywords = "CMOS, III-V, InGaAs short-channel MOSFET, Scaling",
author = "Yanning Sun and Kiewra, {E. W.} and {De Souza}, {J. P.} and Koester, {S. J.} and Bucchignano, {J. J.} and N. Ruiz and Fogel, {K. E.} and Sadana, {D. K.} and Shahidi, {G. G.} and J. Fompeyrine and Webb, {D. J.} and M. Sousa and C. Marchiori and R. Germann and Shiu, {K. T.}",
year = "2009",
doi = "10.1109/ICICDT.2009.5166286",
language = "English (US)",
isbn = "9781424429332",
series = "2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009",
pages = "161--164",
booktitle = "2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009",
note = "2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009 ; Conference date: 18-05-2009 Through 20-05-2009",
}