TY - JOUR
T1 - High-mobility transistors based on single crystals of isotopically substituted rubrene- d 28
AU - Xie, Wei
AU - McGarry, Kathryn A.
AU - Liu, Feilong
AU - Wu, Yanfei
AU - Ruden, P. Paul
AU - Douglas, Christopher J.
AU - Frisbie, C. Daniel
PY - 2013/6/6
Y1 - 2013/6/6
N2 - We have performed a comprehensive study of chemical synthesis, crystal growth, crystal quality, and electrical transport properties of isotopically substituted rubrene-d28 single crystals (D-rubrene, C 42D28). Using a modified synthetic route for protonated-rubrene (H-rubrene, C42H28), we have obtained multigram quantities of rubrene with deuterium incorporation approaching 100%. We found that the vapor-grown D-rubrene single crystals, whose high qualities were confirmed by X-ray diffraction and atomic force microscopy, maintained the remarkable transport properties originally manifested by H-rubrene crystals. Specifically, field-effect hole mobility above 10 cm2 V-1 s-1 was consistently achieved in the vacuum-gap transistor architecture at room temperature, with an intrinsic band-like transport behavior observed over a broad temperature range; maximum hole mobility reached 45 cm2 V-1 s-1 near 100 K. Theoretical analysis provided estimates of the density and characteristic energy of shallow and deep traps presented in D-rubrene crystals. Overall, the successful synthesis and characterization of rubrene-d28 paves an important pathway for future spin-transport experiments in which the H/D isotope effect on spin lifetime can be examined in the testbed of rubrene.
AB - We have performed a comprehensive study of chemical synthesis, crystal growth, crystal quality, and electrical transport properties of isotopically substituted rubrene-d28 single crystals (D-rubrene, C 42D28). Using a modified synthetic route for protonated-rubrene (H-rubrene, C42H28), we have obtained multigram quantities of rubrene with deuterium incorporation approaching 100%. We found that the vapor-grown D-rubrene single crystals, whose high qualities were confirmed by X-ray diffraction and atomic force microscopy, maintained the remarkable transport properties originally manifested by H-rubrene crystals. Specifically, field-effect hole mobility above 10 cm2 V-1 s-1 was consistently achieved in the vacuum-gap transistor architecture at room temperature, with an intrinsic band-like transport behavior observed over a broad temperature range; maximum hole mobility reached 45 cm2 V-1 s-1 near 100 K. Theoretical analysis provided estimates of the density and characteristic energy of shallow and deep traps presented in D-rubrene crystals. Overall, the successful synthesis and characterization of rubrene-d28 paves an important pathway for future spin-transport experiments in which the H/D isotope effect on spin lifetime can be examined in the testbed of rubrene.
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U2 - 10.1021/jp402250v
DO - 10.1021/jp402250v
M3 - Article
AN - SCOPUS:84879390341
SN - 1932-7447
VL - 117
SP - 11522
EP - 11529
JO - Journal of Physical Chemistry C
JF - Journal of Physical Chemistry C
IS - 22
ER -