Hopping transport in -doping layers in GaAs

Qiu Yi Ye; B. I. Shklovskii; A. Zrenner; F. Koch; K. Ploog

doi:10.1103/PhysRevB.41.8477

Hopping transport in -doping layers in GaAs

Qiu Yi Ye, B. I. Shklovskii, A. Zrenner, F. Koch, K. Ploog

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Abstract

We consider hopping transport in a dilutely doped sheet of Si donors in GaAs. Samples are constructed as multiple layers, spaced significantly farther apart than the average, in-plane donor separation. In this system we have determined activation energies and studied the positive magnetoresistance effect quantitatively. We provide a detailed examination of the negative- magnetoresistance effect that stems from quantum interference of neighboring hopping paths.

Original language	English (US)
Pages (from-to)	8477-8484
Number of pages	8
Journal	Physical Review B
Volume	41
Issue number	12
DOIs	https://doi.org/10.1103/PhysRevB.41.8477
State	Published - 1990
Externally published	Yes

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title = "Hopping transport in -doping layers in GaAs",

abstract = "We consider hopping transport in a dilutely doped sheet of Si donors in GaAs. Samples are constructed as multiple layers, spaced significantly farther apart than the average, in-plane donor separation. In this system we have determined activation energies and studied the positive magnetoresistance effect quantitatively. We provide a detailed examination of the negative- magnetoresistance effect that stems from quantum interference of neighboring hopping paths.",

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AU - Ye, Qiu Yi

AU - Shklovskii, B. I.

AU - Zrenner, A.

AU - Koch, F.

AU - Ploog, K.

PY - 1990

Y1 - 1990

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AB - We consider hopping transport in a dilutely doped sheet of Si donors in GaAs. Samples are constructed as multiple layers, spaced significantly farther apart than the average, in-plane donor separation. In this system we have determined activation energies and studied the positive magnetoresistance effect quantitatively. We provide a detailed examination of the negative- magnetoresistance effect that stems from quantum interference of neighboring hopping paths.

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Hopping transport in -doping layers in GaAs

Abstract

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