Abstract
The influence of the crystal orientation on the performance of silicon-based Graphene-Base Heterojunction Transistors (GBHTs) for terahertz operation is investigated by means of an in-house developed simulator based on quantum transport coupled with Poisson equation. The effect of impurity scattering is included, finding that terahertz operation is possible even considering the reduction of the mobility due to dopants.
Original language | English (US) |
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Title of host publication | European Solid-State Device Research Conference |
Editors | Roberto Bez, Paolo Pavan, Gaudenzio Meneghesso |
Publisher | IEEE Computer Society |
Pages | 313-316 |
Number of pages | 4 |
ISBN (Electronic) | 9781479943784 |
DOIs | |
State | Published - Nov 5 2014 |
Event | 44th European Solid-State Device Research Conference, ESSDERC 2014 - Venezia Lido, Italy Duration: Sep 22 2014 → Sep 26 2014 |
Publication series
Name | European Solid-State Device Research Conference |
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ISSN (Print) | 1930-8876 |
Other
Other | 44th European Solid-State Device Research Conference, ESSDERC 2014 |
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Country/Territory | Italy |
City | Venezia Lido |
Period | 9/22/14 → 9/26/14 |
Bibliographical note
Publisher Copyright:© 2014 IEEE.