Interfacial effects on magnetic interlayer coupling between perpendicular Co/Ni multilayers across Ru spacer

Shaohai Chen; Yili Xiao; W. H. Xie; Zongzhi Zhang; B. Ma; Q. Y. Jin

doi:10.1063/1.4905244

Interfacial effects on magnetic interlayer coupling between perpendicular Co/Ni multilayers across Ru spacer

Shaohai Chen, Yili Xiao, W. H. Xie, Zongzhi Zhang, B. Ma, Q. Y. Jin

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Abstract

The interlayer exchange coupling properties in synthetic antiferromagnetic (AF) structures based on Co/Ni perpendicular multilayers were investigated by varying the Ru spacer thickness (t_Ru) and the ferromagnetic (FM) layer material at the FM/Ru interfaces. Samples of two Co layers adjacent to Ru own much stronger AF coupling field (H_AF) and show two H_AF peaks located at t_Ru=0.47 and 1.08nm. If the interfacial Co layers are substituted by Ni, the H_AF at the 1st peak decreases much more considerably, becomes lower than the 2nd one and even disappears due to strong pinhole-induced FM coupling. Such pinhole effect makes H_AF of t_Ru<0.85nm remains unchanged or even decrease with decreasing temperatures. By tuning the interfacial Co layer thickness, pinhole effect has been suppressed as a result of greatly enhanced H_AF, leading to a normal temperature dependence of Ruderman-Kittel-Kasuya-Yosida-type H_AF even at thin t_Ru cases, i.e., increase in H_AF with temperature decreasing.

Original language	English (US)
Article number	262403
Journal	Applied Physics Letters
Volume	105
Issue number	26
DOIs	https://doi.org/10.1063/1.4905244
State	Published - Dec 29 2014
Externally published	Yes

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title = "Interfacial effects on magnetic interlayer coupling between perpendicular Co/Ni multilayers across Ru spacer",

abstract = "The interlayer exchange coupling properties in synthetic antiferromagnetic (AF) structures based on Co/Ni perpendicular multilayers were investigated by varying the Ru spacer thickness (tRu) and the ferromagnetic (FM) layer material at the FM/Ru interfaces. Samples of two Co layers adjacent to Ru own much stronger AF coupling field (HAF) and show two HAF peaks located at tRu=0.47 and 1.08nm. If the interfacial Co layers are substituted by Ni, the HAF at the 1st peak decreases much more considerably, becomes lower than the 2nd one and even disappears due to strong pinhole-induced FM coupling. Such pinhole effect makes HAF of tRu<0.85nm remains unchanged or even decrease with decreasing temperatures. By tuning the interfacial Co layer thickness, pinhole effect has been suppressed as a result of greatly enhanced HAF, leading to a normal temperature dependence of Ruderman-Kittel-Kasuya-Yosida-type HAF even at thin tRu cases, i.e., increase in HAF with temperature decreasing.",

author = "Shaohai Chen and Yili Xiao and Xie, {W. H.} and Zongzhi Zhang and B. Ma and Jin, {Q. Y.}",

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AU - Chen, Shaohai

AU - Xiao, Yili

AU - Xie, W. H.

AU - Zhang, Zongzhi

AU - Ma, B.

AU - Jin, Q. Y.

PY - 2014/12/29

Y1 - 2014/12/29

N2 - The interlayer exchange coupling properties in synthetic antiferromagnetic (AF) structures based on Co/Ni perpendicular multilayers were investigated by varying the Ru spacer thickness (tRu) and the ferromagnetic (FM) layer material at the FM/Ru interfaces. Samples of two Co layers adjacent to Ru own much stronger AF coupling field (HAF) and show two HAF peaks located at tRu=0.47 and 1.08nm. If the interfacial Co layers are substituted by Ni, the HAF at the 1st peak decreases much more considerably, becomes lower than the 2nd one and even disappears due to strong pinhole-induced FM coupling. Such pinhole effect makes HAF of tRu<0.85nm remains unchanged or even decrease with decreasing temperatures. By tuning the interfacial Co layer thickness, pinhole effect has been suppressed as a result of greatly enhanced HAF, leading to a normal temperature dependence of Ruderman-Kittel-Kasuya-Yosida-type HAF even at thin tRu cases, i.e., increase in HAF with temperature decreasing.

AB - The interlayer exchange coupling properties in synthetic antiferromagnetic (AF) structures based on Co/Ni perpendicular multilayers were investigated by varying the Ru spacer thickness (tRu) and the ferromagnetic (FM) layer material at the FM/Ru interfaces. Samples of two Co layers adjacent to Ru own much stronger AF coupling field (HAF) and show two HAF peaks located at tRu=0.47 and 1.08nm. If the interfacial Co layers are substituted by Ni, the HAF at the 1st peak decreases much more considerably, becomes lower than the 2nd one and even disappears due to strong pinhole-induced FM coupling. Such pinhole effect makes HAF of tRu<0.85nm remains unchanged or even decrease with decreasing temperatures. By tuning the interfacial Co layer thickness, pinhole effect has been suppressed as a result of greatly enhanced HAF, leading to a normal temperature dependence of Ruderman-Kittel-Kasuya-Yosida-type HAF even at thin tRu cases, i.e., increase in HAF with temperature decreasing.

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Interfacial effects on magnetic interlayer coupling between perpendicular Co/Ni multilayers across Ru spacer

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