Interfacial layers with photoswitching surface energy for block copolymer alignment and directed self-assembly

Michael J. Maher; Christopher M. Bates; William J. Durand; Gregory Blachut; Dustin W. Janes; Joy Y. Cheng; Daniel P. Sanders; C. Grant Willson; Christopher J. Ellison

doi:10.2494/photopolymer.28.611

Interfacial layers with photoswitching surface energy for block copolymer alignment and directed self-assembly

Michael J. Maher, Christopher M. Bates, William J. Durand, Gregory Blachut, Dustin W. Janes, Joy Y. Cheng, Daniel P. Sanders, C. Grant Willson, Christopher J. Ellison

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

A photochemical process for controlling block copolymer (BCP) domain orientation in an area selected manner is described. Polymers with photoswitching surface energy, used as interfacial underlayers adjoining the BCP layer, were synthesized with photoacid labile monomers. The interfacial polymers were designed to be either inherently neutral or preferential to poly(styrene-block-4-trimethylsilylstyrene). Through patternwise exposure to 193nm light and subsequent reaction with photogenerated acid, the wetting characteristics of the underlayer material can be switched from neutral to preferential (N2P) or preferential to neutral (P2N). Thermal annealing of the BCP confined between a patterned N2P or P2N substrate and a neutral top coat results in alternating areas of perpendicular and parallel BCP domains within the same film. If adapted in tandem with directed self-assembly, this approach could enable new routes to customizable patterns for advanced microelectronics and memory devices.

Original language	English (US)
Pages (from-to)	611-615
Number of pages	5
Journal	Journal of Photopolymer Science and Technology
Volume	28
Issue number	5
DOIs	https://doi.org/10.2494/photopolymer.28.611
State	Published - Oct 20 2015
Externally published	Yes

Bibliographical note

Publisher Copyright:
ï¿½ 2015 SPST.

Keywords

Block copolymers
Directed self-assembly
Photopatterning
Top coats

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abstract = "A photochemical process for controlling block copolymer (BCP) domain orientation in an area selected manner is described. Polymers with photoswitching surface energy, used as interfacial underlayers adjoining the BCP layer, were synthesized with photoacid labile monomers. The interfacial polymers were designed to be either inherently neutral or preferential to poly(styrene-block-4-trimethylsilylstyrene). Through patternwise exposure to 193nm light and subsequent reaction with photogenerated acid, the wetting characteristics of the underlayer material can be switched from neutral to preferential (N2P) or preferential to neutral (P2N). Thermal annealing of the BCP confined between a patterned N2P or P2N substrate and a neutral top coat results in alternating areas of perpendicular and parallel BCP domains within the same film. If adapted in tandem with directed self-assembly, this approach could enable new routes to customizable patterns for advanced microelectronics and memory devices.",

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AU - Maher, Michael J.

AU - Bates, Christopher M.

AU - Durand, William J.

AU - Blachut, Gregory

AU - Janes, Dustin W.

AU - Cheng, Joy Y.

AU - Sanders, Daniel P.

AU - Willson, C. Grant

AU - Ellison, Christopher J.

N1 - Publisher Copyright: ï¿½ 2015 SPST.

PY - 2015/10/20

Y1 - 2015/10/20

N2 - A photochemical process for controlling block copolymer (BCP) domain orientation in an area selected manner is described. Polymers with photoswitching surface energy, used as interfacial underlayers adjoining the BCP layer, were synthesized with photoacid labile monomers. The interfacial polymers were designed to be either inherently neutral or preferential to poly(styrene-block-4-trimethylsilylstyrene). Through patternwise exposure to 193nm light and subsequent reaction with photogenerated acid, the wetting characteristics of the underlayer material can be switched from neutral to preferential (N2P) or preferential to neutral (P2N). Thermal annealing of the BCP confined between a patterned N2P or P2N substrate and a neutral top coat results in alternating areas of perpendicular and parallel BCP domains within the same film. If adapted in tandem with directed self-assembly, this approach could enable new routes to customizable patterns for advanced microelectronics and memory devices.

AB - A photochemical process for controlling block copolymer (BCP) domain orientation in an area selected manner is described. Polymers with photoswitching surface energy, used as interfacial underlayers adjoining the BCP layer, were synthesized with photoacid labile monomers. The interfacial polymers were designed to be either inherently neutral or preferential to poly(styrene-block-4-trimethylsilylstyrene). Through patternwise exposure to 193nm light and subsequent reaction with photogenerated acid, the wetting characteristics of the underlayer material can be switched from neutral to preferential (N2P) or preferential to neutral (P2N). Thermal annealing of the BCP confined between a patterned N2P or P2N substrate and a neutral top coat results in alternating areas of perpendicular and parallel BCP domains within the same film. If adapted in tandem with directed self-assembly, this approach could enable new routes to customizable patterns for advanced microelectronics and memory devices.

KW - Block copolymers

KW - Directed self-assembly

KW - Photopatterning

KW - Top coats

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Interfacial layers with photoswitching surface energy for block copolymer alignment and directed self-assembly

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