Investigation of bottom-contact organic field effect transistors by two-dimensional device modeling

T. Li; P. P. Ruden; I. H. Campbell; D. L. Smith

doi:10.1063/1.1558998

Investigation of bottom-contact organic field effect transistors by two-dimensional device modeling

T. Li, P. P. Ruden, I. H. Campbell, D. L. Smith

Electrical and Computer Engineering

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81 Scopus citations

Abstract

The simulation of organic field effect transistors (OFET) was presented. The results of the two-dimensional modeling of the OFET showed that the surface potential on the polymer layer closely matched the channel potential. The results for the transistor output characteristics and the effects associated with changes in charge carrier injection were also presented.

Original language	English (US)
Pages (from-to)	4017-4022
Number of pages	6
Journal	Journal of Applied Physics
Volume	93
Issue number	7
DOIs	https://doi.org/10.1063/1.1558998
State	Published - Apr 1 2003

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Copyright 2004 Elsevier Science B.V., Amsterdam. All rights reserved.

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title = "Investigation of bottom-contact organic field effect transistors by two-dimensional device modeling",

abstract = "The simulation of organic field effect transistors (OFET) was presented. The results of the two-dimensional modeling of the OFET showed that the surface potential on the polymer layer closely matched the channel potential. The results for the transistor output characteristics and the effects associated with changes in charge carrier injection were also presented.",

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AB - The simulation of organic field effect transistors (OFET) was presented. The results of the two-dimensional modeling of the OFET showed that the surface potential on the polymer layer closely matched the channel potential. The results for the transistor output characteristics and the effects associated with changes in charge carrier injection were also presented.

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Investigation of bottom-contact organic field effect transistors by two-dimensional device modeling

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