@inproceedings{1797dac654f841b3a0aaf46ad155592d,
title = "Materials and processes for high k gate stacks: Results from the FEP transition center",
abstract = "A wide variety of materials and processes for high k dielectrics and metal gate electrodes have been studied as replacements for poly-Si/SiO2 or SiON in advanced CMOS devices. Care must be taken with the interfacial layer to control not only the nitrogen content but its spatial location. Nanocrystallization of the high k dielectric and the corresponding formation of charge and trapping levels associated with defects in the dielectric present one of the current challenges. Control of the workfunction of the gate electrode is shown to depend on many variables, including oxygen content and the material used for the capping layer on the metal gate. The hafnium oxide family of materials, along with metal alloy gates, is seen to provide the best solution for equivalent oxide thicknesses (EOT's) < 0.7 nm, but higher k dielectrics and thinner interfacial layers are needed below 0.7 nm. copyright The Electrochemical Society.",
author = "Osburn, {C. M.} and Campbell, {S. A.} and A. Demkov and E. Eisenbraun and E. Garfunkel and T. Gustafsson and Kingon, {A. I.} and J. Lee and Lichtenwalner, {D. J.} and G. Lucovsky and Ma, {T. P.} and Maria, {J. P.} and V. Misra and Nemanich, {R. J.} and Parsons, {G. N.} and Schlom, {D. G.} and S. Stemmer and Wallace, {R. M.} and J. Whitten",
year = "2006",
doi = "10.1149/1.2355729",
language = "English (US)",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "3",
pages = "389--415",
booktitle = "Physics and Technology of High-k Gate Dielectrics 4",
edition = "3",
note = "Physics and Technology of High-k Gate Dielectrics 4 - 210th Electrochemical Society Meeting ; Conference date: 29-10-2006 Through 03-11-2006",
}