Abstract
The III-nitride materials are recognized as very promising candidates for the fabrication of optoelectronic devices for the visible and ultraviolet spectral ranges as well as for high-frequency electronic devices operating at high power levels and in caustic environments. At present, device quality materials preparation is making rapid progress and some devices have been successfully demonstrated and even commercialized. However, much of the basic materials characterization data that is readily available in more conventional technologies is still lacking for the III-nitride materials. In this paper, a materials-theory-based device modeling methodology that is suitable for this unique situation of accelerated device exploration is discussed. Examples of ultraviolet photodetectors in which the materials-theory-based device modeling technique has been used for device design and data analysis are presented.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 174-183 |
| Number of pages | 10 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 3629 |
| DOIs | |
| State | Published - 1999 |
| Event | Proceedings of the 1999 Photodetectors: Materials and Devices IV - San Jose, CA, USA Duration: Jan 27 1999 → Jan 29 1999 |