Abstract
Ferromagnetic Ni2MnGa and Ni2MnGe have been grown on GaAs(0 0 1) and Ni2MnIn on InAs(0 0 1) by molecular beam epitaxy. In situ reflection high energy electron diffraction, ex situ X-ray diffraction and transmission electron microscopy selected area electron diffraction indicate the growth of pseudomorphic single crystal (0 0 1) Ni2MnGa on (001) GaAs. Superconducting quantum interference device magnetometry measurements show the films to be ferromagnetic with in-plane magnetization and Curie temperatures of ∼340, ∼320, and ∼290K for Ni2MnGa, Ni2MnGe and Ni2MnIn, repectively.
Original language | English (US) |
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Pages (from-to) | 428-432 |
Number of pages | 5 |
Journal | Physica E: Low-Dimensional Systems and Nanostructures |
Volume | 10 |
Issue number | 1-3 |
DOIs | |
State | Published - May 2001 |
Bibliographical note
Funding Information:This research was supported in part by Contract Nos. DARPA/ONR-N/N00014-99-1-1005, ONR-N/N00014-99-1-0233, AFOSR-F49620-98-1-0433, MRSEC Program of the National Science Foundation under Award Number DMR-9809364.
Keywords
- Heusler alloys
- MBE
- Ni MnIn/InAs
- NiMnGa/GaAs
- NiMnGe/GaAs