Abstract
Integration of quantum emitters in photonic structures is an important step in the broader quest to generate and manipulate on-demand single photons via compact solid-state devices. Unfortunately, implementations relying on material platforms that also serve as the emitter host often suffer from a tradeoff between the desired emitter properties and the photonic system practicality and performance. Here, we demonstrate "pick and place"integration of a Si3N4 microdisk optical resonator with a bright emitter host in the form of ∼20-nm-thick hexagonal boron nitride (hBN). The film folds around the microdisk maximizing contact to ultimately form a hybrid hBN/Si3N4 structure. The local strain that develops in the hBN film at the resonator circumference deterministically activates a low density of defect emitters within the whispering gallery mode volume of the microdisk. These conditions allow us to demonstrate cavity-mediated out-coupling of emission from defect states in hBN through the microdisk cavity modes. Our results pave the route toward the development of chip-scale quantum photonic circuits with independent emitter/resonator optimization for active and passive functionalities.
Original language | English (US) |
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Pages (from-to) | 2937-2944 |
Number of pages | 8 |
Journal | Nanophotonics |
Volume | 9 |
Issue number | 9 |
DOIs | |
State | Published - Sep 1 2020 |
Externally published | Yes |
Bibliographical note
Publisher Copyright:© 2020 Nicholas V. Proscia et al., published by De Gruyter, Berlin/Boston 2020.
Keywords
- 2D materials
- Color center
- Hexagonal boron nitride
- Microcavities
- Quantum emission
- Strain