Abstract
The microstructure of Al films deposited on GaAs(100) 2×4 surfaces through chemical vapor deposition from dimethylethylamine alane in the 100-160°C temperature range exhibits a dominant (111) texture which is not encountered in evaporated films. Such a texture has been associated with enhanced electromigration resistance in related systems. Growth of (111)-oriented grains is observed when the deposition rate is limited by the surface reaction of the impinging precursor molecules, while at higher temperatures (160-400°C) only the conventional texture is observed
Original language | English (US) |
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Pages (from-to) | 3090-3092 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 71 |
Issue number | 21 |
DOIs | |
State | Published - Nov 24 1997 |
Bibliographical note
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