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Abstract
Black phosphorus stands out from the family of two-dimensional materials as a semiconductor with a direct, layer-dependent bandgap spanning the visible to mid-infrared (mid-IR) spectral range. It is, therefore, a very promising material for various optoelectronic applications, particularly in the important mid-IR range. While mid-IR technology has been advancing rapidly, both photodetection and electro-optic modulation in the mid-IR rely on narrow-band compound semiconductors, which are difficult and expensive to integrate with the ubiquitous silicon photonics. For mid-IR photodetection, black phosphorus has already been proven to be a viable alternative. Here, we demonstrate electro-optic modulation of mid-IR absorption in few-layer black phosphorus. Our experimental and theoretical results find that, within the doping range obtainable in our samples, the quantum confined Franz-Keldysh effect is the dominant mechanism of electro-optic modulation. A spectroscopic study on samples with varying thicknesses reveals strong layer dependence in the interband transition between specific pairs of sub-bands. Our results show that black phosphorus is a very promising material to realizing efficient mid-IR modulators.
Original language | English (US) |
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Pages (from-to) | 6315-6320 |
Number of pages | 6 |
Journal | Nano letters |
Volume | 17 |
Issue number | 10 |
DOIs | |
State | Published - Oct 11 2017 |
Bibliographical note
Publisher Copyright:© 2017 American Chemical Society.
Keywords
- Black phosphorus
- electro-absorptive modulation
- electro-optic modulation
- midinfrared
- quantum confined Franz-Keldysh effect
- transmission extinction measurement
How much support was provided by MRSEC?
- Partial
Reporting period for MRSEC
- Period 4
PubMed: MeSH publication types
- Journal Article
- Research Support, U.S. Gov't, Non-P.H.S.