TY - JOUR
T1 - Modeling charge transport in quantum dot light emitting devices with NiO and ZnO transport layers and Si quantum dots
AU - Kumar, Brijesh
AU - Campbell, Stephen A.
AU - Paul Ruden, P.
PY - 2013/7/28
Y1 - 2013/7/28
N2 - We propose a model for quantum dot light emitting devices (QD-LEDs), which explores the most important parameters that control their electrical characteristics. The device is divided into a hole transport layer, several quantum dot layers, and an electron transport layer. Conduction and recombination in the central quantum dot region is described by a system of coupled rate equations, and the drift-diffusion approximation is used for the hole and electron transport layers. For NiO/Si-QDs/ZnO devices with suitable design parameter, the current and light output are primarily controlled by the quantum dot layers, specifically, their radiative and non-radiative recombination coefficients. Radiative recombination limits the device current only at sufficiently large bias.
AB - We propose a model for quantum dot light emitting devices (QD-LEDs), which explores the most important parameters that control their electrical characteristics. The device is divided into a hole transport layer, several quantum dot layers, and an electron transport layer. Conduction and recombination in the central quantum dot region is described by a system of coupled rate equations, and the drift-diffusion approximation is used for the hole and electron transport layers. For NiO/Si-QDs/ZnO devices with suitable design parameter, the current and light output are primarily controlled by the quantum dot layers, specifically, their radiative and non-radiative recombination coefficients. Radiative recombination limits the device current only at sufficiently large bias.
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U2 - 10.1063/1.4816680
DO - 10.1063/1.4816680
M3 - Article
AN - SCOPUS:84882335548
SN - 0021-8979
VL - 114
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 4
M1 - 044507
ER -