Near-field scanning optical spectroscopy of an InGaN quantum well

P. A. Crowell; D. K. Young; S. Keller; E. L. Hu; D. D. Awschalom

doi:10.1063/1.120875

Near-field scanning optical spectroscopy of an InGaN quantum well

P. A. Crowell, D. K. Young, S. Keller, E. L. Hu, D. D. Awschalom

Physics and Astronomy (Twin Cities)

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Abstract

Near-field scanning optical microscopy is used to image photoluminescence (PL) in an InGaN/GaN quantum well (QW) with spatial resolution of approximately 100 nm for temperatures between 50 and 295 K. Strong (∼50%) fluctuations in the quantum well photoluminescence as well as a tenfold enhancement of deep level-related emission at lower energies occur at large (∼500 nm diam) pits in the heterostructure. Regions of smaller (∼15%) fluctuations in the QW PL are not correlated with the presence of pits. The spectrum of the QW PL shows no significant variations on the length scales probed in this experiment. We thus find no spectroscopic signature of the recombination of strongly localized carriers at temperatures above 50 K.

Original language	English (US)
Pages (from-to)	927-929
Number of pages	3
Journal	Applied Physics Letters
Volume	72
Issue number	8
DOIs	https://doi.org/10.1063/1.120875
State	Published - 1998

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title = "Near-field scanning optical spectroscopy of an InGaN quantum well",

abstract = "Near-field scanning optical microscopy is used to image photoluminescence (PL) in an InGaN/GaN quantum well (QW) with spatial resolution of approximately 100 nm for temperatures between 50 and 295 K. Strong (∼50%) fluctuations in the quantum well photoluminescence as well as a tenfold enhancement of deep level-related emission at lower energies occur at large (∼500 nm diam) pits in the heterostructure. Regions of smaller (∼15%) fluctuations in the QW PL are not correlated with the presence of pits. The spectrum of the QW PL shows no significant variations on the length scales probed in this experiment. We thus find no spectroscopic signature of the recombination of strongly localized carriers at temperatures above 50 K.",

author = "Crowell, {P. A.} and Young, {D. K.} and S. Keller and Hu, {E. L.} and Awschalom, {D. D.}",

year = "1998",

doi = "10.1063/1.120875",

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T1 - Near-field scanning optical spectroscopy of an InGaN quantum well

AU - Crowell, P. A.

AU - Young, D. K.

AU - Keller, S.

AU - Hu, E. L.

AU - Awschalom, D. D.

PY - 1998

Y1 - 1998

N2 - Near-field scanning optical microscopy is used to image photoluminescence (PL) in an InGaN/GaN quantum well (QW) with spatial resolution of approximately 100 nm for temperatures between 50 and 295 K. Strong (∼50%) fluctuations in the quantum well photoluminescence as well as a tenfold enhancement of deep level-related emission at lower energies occur at large (∼500 nm diam) pits in the heterostructure. Regions of smaller (∼15%) fluctuations in the QW PL are not correlated with the presence of pits. The spectrum of the QW PL shows no significant variations on the length scales probed in this experiment. We thus find no spectroscopic signature of the recombination of strongly localized carriers at temperatures above 50 K.

AB - Near-field scanning optical microscopy is used to image photoluminescence (PL) in an InGaN/GaN quantum well (QW) with spatial resolution of approximately 100 nm for temperatures between 50 and 295 K. Strong (∼50%) fluctuations in the quantum well photoluminescence as well as a tenfold enhancement of deep level-related emission at lower energies occur at large (∼500 nm diam) pits in the heterostructure. Regions of smaller (∼15%) fluctuations in the QW PL are not correlated with the presence of pits. The spectrum of the QW PL shows no significant variations on the length scales probed in this experiment. We thus find no spectroscopic signature of the recombination of strongly localized carriers at temperatures above 50 K.

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Near-field scanning optical spectroscopy of an InGaN quantum well

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