Abstract
A new switching mechanism in a two-terminal semiconductor heterolayer structure is proposed which capitalizes on nonlinear electron temperature effects in adjacent heterolayers. The estimated switching speed of an optimized heterostructure hot electron diode should be extremely fast, perhaps as fast as 200 fs. Data are presented on prototype devices which show the expected negative differential resistance and indicate that the basic physical model is correct.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 3775-3777 |
| Number of pages | 3 |
| Journal | Journal of Applied Physics |
| Volume | 60 |
| Issue number | 10 |
| DOIs | |
| State | Published - 1986 |