Abstract
The temperature dependence of the dark conductivity of hydrogenated amorphous silicon (a-Si:H) thin films and a-Si:H films containing germanium or silicon nanocrystalline inclusions are examined. Analysis using the reduced activation energy provides clear evidence that conduction is non-Arrhenius, and is more accurately described by an anomalous hopping expression σ (T) = σ 1 exp [- (T 0 / T) κ] where the exponent is κ ∼ 0.75 ± 0.05. This observed temperature dependence is discussed in terms of alternative models for electronic transport in amorphous semiconductors.
Original language | English (US) |
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Article number | 215103 |
Journal | Journal of Applied Physics |
Volume | 118 |
Issue number | 21 |
DOIs | |
State | Published - Dec 7 2015 |
Bibliographical note
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