Observation of the Unidirectional Magnetoresistance in Antiferromagnetic Insulator Fe2O3/Pt Bilayers

Yihong Fan; Pengxiang Zhang; Jiahao Han; Yang Lv; Luqiao Liu; Jian Ping Wang

doi:10.1002/aelm.202300232

Observation of the Unidirectional Magnetoresistance in Antiferromagnetic Insulator Fe₂O₃/Pt Bilayers

Yihong Fan, Pengxiang Zhang, Jiahao Han, Yang Lv, Luqiao Liu, Jian Ping Wang

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Unidirectional magnetoresistance (UMR) has been observed in a variety of stacks with ferromagnetic/spin Hall material bilayer structures. In this work, UMR in antiferromagnetic insulator Fe₂O₃/Pt structure is reported. The UMR has a negative value, which is related to interfacial Rashba coupling and band splitting. Thickness-dependent measurement reveals a potential competition between UMR and the unidirectional spin Hall magnetoresistance (USMR). This work reveals the existence of UMR in antiferromagnetic insulators/heavy metal bilayers and broadens the way for the application of antiferromagnet-based spintronic devices.

Original language	English (US)
Article number	2300232
Journal	Advanced Electronic Materials
Volume	9
Issue number	8
DOIs	https://doi.org/10.1002/aelm.202300232
State	Published - Aug 2023

Bibliographical note

Publisher Copyright:
© 2023 The Authors. Advanced Electronic Materials published by Wiley-VCH GmbH.

Keywords

antiferromagnetic materials
magnetoresistance
spin Hall effect
spintronics
unidirectional magnetoresistance

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10.1002/aelm.202300232

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Cite this

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