Pattern induced ordering of semiconducting graphene ribbons grown from nitrogen-seeded SiC

F. Wang; G. Liu; S. Rothwell; M. S. Nevius; C. Mathieu; N. Barrett; A. Sala; T. O. Menteş; A. Locatelli; P. I. Cohen; L. C. Feldman; E. H. Conrad

doi:10.1016/j.carbon.2014.10.081

Pattern induced ordering of semiconducting graphene ribbons grown from nitrogen-seeded SiC

F. Wang, G. Liu, S. Rothwell, M. S. Nevius, C. Mathieu, N. Barrett, A. Sala, T. O. Menteş, A. Locatelli, P. I. Cohen, L. C. Feldman, E. H. Conrad

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

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Abstract

A wide band gap semiconducting form of graphene can be produced by growing a buckled form of graphene from a SiC(0001) surface randomly seeded with nitrogen. In this work, we show that the disorder observed in this form of graphene can be substantially reduced by pre-patterning the nitrogen seeded SiC surface into trenches. The result of the patterning is highly improved film thickness variations, orientational epitaxy, domain size, and electronic structure. The ordering induced by this patterned growth offers a way to take advantage of the extremely high mobilities and switching speeds in C-face graphene devices while having the thickness uniformity and fabrication scalability normally only achievable for graphene grown on the SiC(0001) Si-face.

Original language	English (US)
Pages (from-to)	360-367
Number of pages	8
Journal	Carbon
Volume	82
Issue number	C
DOIs	https://doi.org/10.1016/j.carbon.2014.10.081
State	Published - 2015

Bibliographical note

Funding Information:
This research was supported by the NSF under Grant Nos. DMR-1206793 , DMR-1206655 , and DMR-1206256 . Additional support is also acknowledged from the NSF DMR- 1005880 and the W.M. Keck Foundation.

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title = "Pattern induced ordering of semiconducting graphene ribbons grown from nitrogen-seeded SiC",

abstract = "A wide band gap semiconducting form of graphene can be produced by growing a buckled form of graphene from a SiC(0001) surface randomly seeded with nitrogen. In this work, we show that the disorder observed in this form of graphene can be substantially reduced by pre-patterning the nitrogen seeded SiC surface into trenches. The result of the patterning is highly improved film thickness variations, orientational epitaxy, domain size, and electronic structure. The ordering induced by this patterned growth offers a way to take advantage of the extremely high mobilities and switching speeds in C-face graphene devices while having the thickness uniformity and fabrication scalability normally only achievable for graphene grown on the SiC(0001) Si-face.",

author = "F. Wang and G. Liu and S. Rothwell and Nevius, {M. S.} and C. Mathieu and N. Barrett and A. Sala and Mente{\c s}, {T. O.} and A. Locatelli and Cohen, {P. I.} and Feldman, {L. C.} and Conrad, {E. H.}",

note = "Funding Information: This research was supported by the NSF under Grant Nos. DMR-1206793 , DMR-1206655 , and DMR-1206256 . Additional support is also acknowledged from the NSF DMR- 1005880 and the W.M. Keck Foundation. ",

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language = "English (US)",

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T1 - Pattern induced ordering of semiconducting graphene ribbons grown from nitrogen-seeded SiC

AU - Wang, F.

AU - Liu, G.

AU - Rothwell, S.

AU - Nevius, M. S.

AU - Mathieu, C.

AU - Barrett, N.

AU - Sala, A.

AU - Menteş, T. O.

AU - Locatelli, A.

AU - Cohen, P. I.

AU - Feldman, L. C.

AU - Conrad, E. H.

N1 - Funding Information: This research was supported by the NSF under Grant Nos. DMR-1206793 , DMR-1206655 , and DMR-1206256 . Additional support is also acknowledged from the NSF DMR- 1005880 and the W.M. Keck Foundation.

PY - 2015

Y1 - 2015

N2 - A wide band gap semiconducting form of graphene can be produced by growing a buckled form of graphene from a SiC(0001) surface randomly seeded with nitrogen. In this work, we show that the disorder observed in this form of graphene can be substantially reduced by pre-patterning the nitrogen seeded SiC surface into trenches. The result of the patterning is highly improved film thickness variations, orientational epitaxy, domain size, and electronic structure. The ordering induced by this patterned growth offers a way to take advantage of the extremely high mobilities and switching speeds in C-face graphene devices while having the thickness uniformity and fabrication scalability normally only achievable for graphene grown on the SiC(0001) Si-face.

AB - A wide band gap semiconducting form of graphene can be produced by growing a buckled form of graphene from a SiC(0001) surface randomly seeded with nitrogen. In this work, we show that the disorder observed in this form of graphene can be substantially reduced by pre-patterning the nitrogen seeded SiC surface into trenches. The result of the patterning is highly improved film thickness variations, orientational epitaxy, domain size, and electronic structure. The ordering induced by this patterned growth offers a way to take advantage of the extremely high mobilities and switching speeds in C-face graphene devices while having the thickness uniformity and fabrication scalability normally only achievable for graphene grown on the SiC(0001) Si-face.

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SP - 360

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JO - Carbon

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Pattern induced ordering of semiconducting graphene ribbons grown from nitrogen-seeded SiC

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