Preparation of SiC/SiNWs/graphene heterojunction on 4H-SiC(0001)

H. Chen; Q. Q. Lei; L. B. Li; Y. Zang; G. Q. Zhang; C. J. Xia; C. H. Dai; J. H. Cho

Preparation of SiC/SiNWs/graphene heterojunction on 4H-SiC(0001)

H. Chen, Q. Q. Lei, L. B. Li, Y. Zang, G. Q. Zhang, C. J. Xia, C. H. Dai, J. H. Cho

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Abstract

Si nanowires (NWs) can be used as the visible and near-infrared absorption layer in SiC/SiNWs/graphene heterostructure to solve the problem that SiC optoelectronic devices cannot be operated by visible and near-infrared lights. In this paper, Si NWs are prepared on 4H-SiC substrate by using the Au-catalyzed chemical vapor deposition. The SiNWs on 4H-SiC have the polycrystalline structure with a preferred growth orientation of <111>. The SiC/SiNWs/graphene heterostructure exhibits good photoelectric performance, with a VIS-NIR illumination of 0.1W/cm², the photocurrent and the open-circuit voltage are J_ph=4.27nA and V_OC=0.035V, respectively.

Original language	English (US)
Pages (from-to)	606-608
Number of pages	3
Journal	Optoelectronics and Advanced Materials, Rapid Communications
Volume	13
Issue number	11-12
State	Published - 2019
Externally published	Yes

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© 2019, National Institute of Optoelectronics. All rights reserved.

Keywords

4H-SiC
Graphene
Heterojunction
Raman spectra
Si nanowires

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title = "Preparation of SiC/SiNWs/graphene heterojunction on 4H-SiC(0001)",

abstract = "Si nanowires (NWs) can be used as the visible and near-infrared absorption layer in SiC/SiNWs/graphene heterostructure to solve the problem that SiC optoelectronic devices cannot be operated by visible and near-infrared lights. In this paper, Si NWs are prepared on 4H-SiC substrate by using the Au-catalyzed chemical vapor deposition. The SiNWs on 4H-SiC have the polycrystalline structure with a preferred growth orientation of <111>. The SiC/SiNWs/graphene heterostructure exhibits good photoelectric performance, with a VIS-NIR illumination of 0.1W/cm2, the photocurrent and the open-circuit voltage are Jph=4.27nA and VOC=0.035V, respectively.",

keywords = "4H-SiC, Graphene, Heterojunction, Raman spectra, Si nanowires",

author = "H. Chen and Lei, {Q. Q.} and Li, {L. B.} and Y. Zang and Zhang, {G. Q.} and Xia, {C. J.} and Dai, {C. H.} and Cho, {J. H.}",

year = "2019",

language = "English (US)",

volume = "13",

pages = "606--608",

journal = "Optoelectronics and Advanced Materials, Rapid Communications",

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publisher = "National Institute of Optoelectronics",

number = "11-12",

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TY - JOUR

T1 - Preparation of SiC/SiNWs/graphene heterojunction on 4H-SiC(0001)

AU - Chen, H.

AU - Lei, Q. Q.

AU - Li, L. B.

AU - Zang, Y.

AU - Zhang, G. Q.

AU - Xia, C. J.

AU - Dai, C. H.

AU - Cho, J. H.

PY - 2019

Y1 - 2019

N2 - Si nanowires (NWs) can be used as the visible and near-infrared absorption layer in SiC/SiNWs/graphene heterostructure to solve the problem that SiC optoelectronic devices cannot be operated by visible and near-infrared lights. In this paper, Si NWs are prepared on 4H-SiC substrate by using the Au-catalyzed chemical vapor deposition. The SiNWs on 4H-SiC have the polycrystalline structure with a preferred growth orientation of <111>. The SiC/SiNWs/graphene heterostructure exhibits good photoelectric performance, with a VIS-NIR illumination of 0.1W/cm2, the photocurrent and the open-circuit voltage are Jph=4.27nA and VOC=0.035V, respectively.

AB - Si nanowires (NWs) can be used as the visible and near-infrared absorption layer in SiC/SiNWs/graphene heterostructure to solve the problem that SiC optoelectronic devices cannot be operated by visible and near-infrared lights. In this paper, Si NWs are prepared on 4H-SiC substrate by using the Au-catalyzed chemical vapor deposition. The SiNWs on 4H-SiC have the polycrystalline structure with a preferred growth orientation of <111>. The SiC/SiNWs/graphene heterostructure exhibits good photoelectric performance, with a VIS-NIR illumination of 0.1W/cm2, the photocurrent and the open-circuit voltage are Jph=4.27nA and VOC=0.035V, respectively.

KW - 4H-SiC

KW - Graphene

KW - Heterojunction

KW - Raman spectra

KW - Si nanowires

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M3 - Article

AN - SCOPUS:85079729170

SN - 1842-6573

VL - 13

SP - 606

EP - 608

JO - Optoelectronics and Advanced Materials, Rapid Communications

JF - Optoelectronics and Advanced Materials, Rapid Communications

IS - 11-12

ER -

Preparation of SiC/SiNWs/graphene heterojunction on 4H-SiC(0001)

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Keywords

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