TY - JOUR
T1 - Pyrolytic laser assisted chemical vapor deposition of Al from dimethylethylamine-alane
T2 - Characterization and a new two-step writing process
AU - Han, Jaesung
AU - Jensen, Klavs F.
AU - Senzaki, Yoshihide
AU - Gladfelter, Wayne L.
PY - 1994
Y1 - 1994
N2 - We describe pyrolytic laser assisted chemical vapor deposition of Al from dimethylethylamine-alane with 514-nm radiation from an Ar ion laser. High purity Al lines with resistivity close to bulk Al are reported for a range of operating conditions. The relationship between operating parameters and materials properties of the deposited lines is delineated. Results from deposition on different substrates, Pt, Au, W, and Si, provide insight into thermal and nucleation effects in the laser writing process. Based on the observed nucleation behavior, we demonstrate a two-step fast writing process involving fast laser nucleation of lines, followed by selective chemical vapor deposition of Al on the nucleated pattern.
AB - We describe pyrolytic laser assisted chemical vapor deposition of Al from dimethylethylamine-alane with 514-nm radiation from an Ar ion laser. High purity Al lines with resistivity close to bulk Al are reported for a range of operating conditions. The relationship between operating parameters and materials properties of the deposited lines is delineated. Results from deposition on different substrates, Pt, Au, W, and Si, provide insight into thermal and nucleation effects in the laser writing process. Based on the observed nucleation behavior, we demonstrate a two-step fast writing process involving fast laser nucleation of lines, followed by selective chemical vapor deposition of Al on the nucleated pattern.
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U2 - 10.1063/1.111119
DO - 10.1063/1.111119
M3 - Article
AN - SCOPUS:0027927312
SN - 0003-6951
VL - 64
SP - 425
EP - 427
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 4
ER -